Datasheet > NTD2406.1G

NTD2406.1G

更新时间： 2024-11-03 01:22:03

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	86K
描述
Power MOSFET 60 Volt, 24 Amp

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTD2406.1G 数据手册

NTD24N06

Power MOSFET

60 Volt, 24 Amp

N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

DS(on)

TYP

I MAX

(BR)DSS

Features

60 V

32 mW

24 A

• Pb−Free Packages are Available

N−Channel

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Rating

Symbol Value

Unit

Vdc

Drain−to−Source Voltage

DSS

Drain−to−Gate Voltage (R = 10 MW)

Drain

DGR

Gate−to−Source Voltage

− Continuous

"20

"30

− Non−repetitive (t v10 ms)

Drain Current

− Continuous @ T = 25°C, T = 150°C

DPAK

CASE 369C

(Surface Mount)

STYLE 2

Adc

Apk

− Continuous @ T = 25°C, T = 175°C

Gate

Drain

− Continuous @ T = 100°C, T = 175°C

Source

− Single Pulse (t v10 ms), T = 175°C

Total Power Dissipation @ T = 25°C

62.5

0.42

1.88

1.36

W/°C

Drain

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 1)

Total Power Dissipation @ T = 25°C (Note 2)

Operating and Storage Temperature Range

T , T

−55 to

+175

°C

stg

Single Pulse Drain−to−Source Avalanche

162

DPAK

CASE 369D

(Straight Lead)

STYLE 2

Energy − Starting T = 25°C

(V = 50 Vdc, V = 10 Vdc,

L = 1.0 mH, I (pk) = 18 A, V = 60 Vdc)

Gate Drain Source

Thermal Resistance

°C/W

°C

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

2.4

110

= Year

24N06

= Work Week

= Device Code

= Pb−Free Package

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

260

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.

2. When surface mounted to an FR−4 board using the minimum recommended

pad size.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

August, 2005 − Rev. 4

NTD24N06/D

12 3 4 5 6 7 8

中文翻译

下载PDF

与NTD2406.1G相关器件

型号	品牌	获取价格	描述	数据表
NTD24061	ONSEMI	获取价格	Power MOSFET 60 Volt, 24 Amp NâChannel DPAK
NTD2406-1	ONSEMI	获取价格	Power MOSFET 60 V, 24 A, N-Channel DPAK
NTD24061G	ONSEMI	获取价格	Power MOSFET 60 Volt, 24 Amp NâChannel DPAK
NTD2406-1G	ONSEMI	获取价格	Power MOSFET
NTD2410	CRYDOM	获取价格	THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY
NTD2410-10	CRYDOM	获取价格	Trigger Output SSR, 1-Channel, 3750V Isolation, ROHS COMPLIANT, PLASTIC PACKAGE-4
NTD2410E	CRYDOM	获取价格	Trigger Output SSR, 1-Channel, 3750V Isolation, PLASTIC PACKAGE-4
NTD2410E-10	CRYDOM	获取价格	Trigger Output SSR, 1-Channel, 3750V Isolation, PLASTIC PACKAGE-4
NTD2410EF	CRYDOM	获取价格	Solid State Relay
NTD2410F	CRYDOM	获取价格	Trigger Output SSR, 1-Channel, 3750V Isolation, PLASTIC PACKAGE-4

与NTD2406.1G相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

5
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

2
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

23
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

24

产品中心

服务支持

精选活动

关于我们

帮助中心

NTD2406.1G

NTD2406.1G 数据手册

与NTD2406.1G相关器件

与NTD2406.1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTD2406.1G

NTD2406.1G 数据手册

与NTD2406.1G相关器件

与NTD2406.1G相关文章

您还可以找

您在本页遇到什么问题？