Datasheet > NTD24N06-1G

NTD24N06-1G

更新时间： 2024-01-21 20:57:12

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	116K
描述
MOSFET N-CH 60V 24A IPAK

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中文翻译

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技术参数
数据手册

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NTD24N06-1G 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	not_compliant	风险等级：	5.82
Base Number Matches：	1

NTD24N06-1G 数据手册

NTD24N06

Power MOSFET

60 V, 24 A, N−Channel DPAK/IPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

Features

TYP

I MAX

(BR)DSS

DS(on)

• Pb−Free Packages are Available

60 V

32 mW

24 A

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

N−Channel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Vdc

Drain−to−Source Voltage

DSS

DGR

Drain−to−Gate Voltage (R = 10 MW)

Gate−to−Source Voltage

− Continuous

− Non−repetitive (t v10 ms)

DPAK

CASE 369C

(Surface Mount)

STYLE 2

IPAK

CASE 369D

(Straight Lead)

STYLE 2

Drain Current

− Continuous @ T = 25°C, T = 150°C

Adc

Apk

− Continuous @ T = 25°C, T = 175°C

− Continuous @ T = 100°C, T = 175°C

MARKING DIAGRAMS

& PIN ASSIGNMENTS

− Single Pulse (t v10 ms), T = 175°C

Total Power Dissipation @ T = 25°C

62.5

0.42

1.88

1.36

W/°C

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 1)

Drain

Total Power Dissipation @ T = 25°C (Note 2)

Operating and Storage Temperature Range

T , T

−55 to

+175

°C

stg

Single Pulse Drain−to−Source Avalanche

162

Energy − Starting T = 25°C

(V = 50 Vdc, V = 10 Vdc,

Gate

Drain

L = 1.0 mH, I (pk) = 18 A, V = 60 Vdc)

Source

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

°C/W

°C

Gate Drain Source

2.4

110

= Assembly Location*

= Year

24N06

= Work Week

= Device Code

= Pb−Free Package

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. When surface mounted to an FR−4 board using the 0.5 sq in drain pad size.

2. When surface mounted to an FR−4 board using the minimum recommended

pad size.

* The Assembly Location code (A) is front side

optional. In cases where the Assembly Location is

stamped in the package, the front side assembly

code may be blank.

ORDERING INFORMATION

See detailed ordering and shipping information on page 2 of

this data sheet.

Publication Order Number:

September, 2014 − Rev. 5

NTD24N06/D

12 3 4 5 6 7 8

中文翻译

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与NTD24N06-1G相关器件

型号	品牌	获取价格	描述	数据表
NTD24N06G	ONSEMI	获取价格	Power MOSFET 60 Volt, 24 Amp NâChannel DPAK
NTD24N06L	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD24N06L-1	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD24N06L-1G	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD24N06LG	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD24N06LT4	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD24N06LT4G	ONSEMI	获取价格	Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD24N06LT4G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
NTD24N06T4	ONSEMI	获取价格	Power MOSFET 60 V, 24 A, N−Channel DPAK
NTD24N06T4G	ONSEMI	获取价格	Power MOSFET 60 V, 24 A, N−Channel DPAK

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