Datasheet > NTD26N08/D

NTD26N08/D

更新时间： 2024-11-20 23:54:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
2页	37K
描述
80 V Power MOSFET

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NTD26N08/D 数据手册

NTD26N08, NTD26N08L

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80 V Power MOSFET

ON Semiconductor utilizes its latest MOSFET technology process

to manufacture 80 V power MOSFET devices to achieve the lowest

possible on–resistance per silicon area. These 80 V devices are

designed for Power Management solutions in 42 V Automotive

system applications. Typical applications include integrated starter

alternator, electronic power steering, electronic fuel injection,

catalytic converter heaters and other high power applications made

possible via an automotive 42 V bus. ON Semiconductor’s latest

technology offering continues to offer high avalanche energy

capability and low reverse recovery losses.

http://onsemi.com

26 AMPERES

26N08 Typ R

= 37 mΩ

DS(on)

26N08L Typ R

= 41 mΩ

DS(on)

ELECTRICAL CHARACTERISTICS

(T = 25°C unless otherwise noted)

Characteristic

Symbol

Min Typ Max Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown

Voltage

Vdc

(BR)DSS

= 0 Vdc, I = 250 µAdc)

–

Zero Gate Voltage Drain Current

µAdc

DSS

= 80 Vdc, V

= 0 Vdc)

= 0 Vdc,

–

1.0

T =150°C)

Gate–Body Leakage Current

(V = ±20 Vdc, V = 0 Vdc)

nAdc

Vdc

GSS

–

±100

GS DS

ON CHARACTERISTICS

Gate Threshold Voltage

GS(th)

= V , I = 250 µAdc)

GS D

NTD26N08

2.0

1.0

3.0

1.5

4.0

2.0

NTD26N08L

DPAK

CASE 369A

STYLE 2

Static Drain–to–Source

On–Resistance

mΩ

DS(on)

(I = 13 Adc)

NTD26N08, V = 10 V

–

NTD26N08L, V

= 5 V

This document contains information on a product under development. ON Semiconductor

reserves the right to change or discontinue this product without notice.

Semiconductor Components Industries, LLC, 2000

Publication Order Number:

October, 2000 – Rev. 0

NTD26N08/D

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NTD2955-1	ONSEMI	获取价格	12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
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NTD2955-1G	ROCHESTER	获取价格	12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3
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