NTD2955-1

更新时间： 2024-02-26 02:12:05

品牌	Logo	应用领域
安森美 - ONSEMI		晶体晶体管开关脉冲
页数	文件大小	规格书
8页	68K
描述
12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3

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NTD2955-1 数据手册

NTD2955

Power MOSFET

−60 V, −12 A, P−Channel DPAK

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low−voltage, high−

speed switching applications in power supplies, converters, and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer an additional safety margin against unexpected

voltage transients.

http://onsemi.com

TYP

I MAX

(BR)DSS

DS(on)

−60 V

155 mW @ −10 V, 6 A

−12 A

Features

• Avalanche Energy Specified

P−Channel

• I

and V

Specified at Elevated Temperature

DSS

DS(on)

• Designed for Low−Voltage, High−Speed Switching Applications and

to Withstand High Energy in the Avalanche and Commutation Modes

• Pb−Free Packages are Available

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

DSS

−60

Vdc

MARKING

DIAGRAMS

Gate−to−Source Voltage

− Continuous

± 20

± 25

Vdc

Vpk

GSM

− Non−repetitive (t ≤ 10 ms)

Drain Current

Drain Current − Continuous @ T = 25°C

Drain Current − Single Pulse (t ≤ 10 ms)

Drain

−12

−36

Adc

Apk

DPAK

CASE 369C

STYLE 2

Total Power Dissipation @ T = 25°C

Operating and Storage Temperature

Range

T , T

−55 to

175

°C

stg

Gate

Single Pulse Drain−to−Source Avalanche

216

Drain

Source

Energy − Starting T = 25°C

(V = 25 Vdc, V = 10 Vdc, Peak

I = 12 Apk, L = 3.0 mH, R = 25 W)

Drain

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

2.73

71.4

100

°C/W

°C

DPAK−3

CASE 369D

STYLE 2

Maximum Lead Temperature for Soldering

Purposes, 1/8 in. from case for

10 seconds

260

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

Gate Drain Source

NT2955

Device Code

= Assembly Location

= Year

1. When surface mounted to an FR4 board using 1 in pad size

(Cu area = 1.127 in ).

= Work Week

2. When surface mounted to an FR4 board using the minimum recommended

pad size (Cu area = 0.412 in ).

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

October, 2004 − Rev. 7

NTD2955/D

12 3 4 5 6 7 8

中文翻译

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与NTD2955-1相关器件

型号	品牌	获取价格	描述	数据表
NTD2955-1G	ONSEMI	获取价格	Power MOSFET
NTD2955-1G	ROCHESTER	获取价格	12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3
NTD2955D	ONSEMI	获取价格	Power MOSFET
NTD2955G	ONSEMI	获取价格	Power MOSFET
NTD2955G	ROCHESTER	获取价格	12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369C-01, DPAK-3
NTD2955P	ONSEMI	获取价格	â60 V, â12 A, PâChannel DPAK
NTD2955PT4G	ONSEMI	获取价格	Power MOSFET â60 V, â12 A, PâChannel DP
NTD2955T4	ONSEMI	获取价格	Power MOSFET
NTD2955T4G	ONSEMI	获取价格	Power MOSFET
NTD2955T4G	UMW	获取价格	种类:P-Channel;漏源导通电阻:-60V;持续漏极电流（Id）（在25°C时）:-

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