Datasheet > NTD280N60S5Z

NTD280N60S5Z

更新时间： 2024-11-19 11:14:39

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	241K
描述
Power MOSFET, N-Channel, SUPERFET® V, Easy Drive with Zener Diode, 600 V, 13 A, 280 mΩ, DPAK

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NTD280N60S5Z 数据手册

DATA SHEET

www.onsemi.com

MOSFET - Power, Single

N-Channel, SUPERFET⁾,

with Zener Diode, DPAK

600 V, 280 mW, 13 A

MAX

I MAX

(BR)DSS

DS(ON)

600 V

280 mW @ V = 10 V

13 A

NTD280N60S5Z

Description

SUPERFET V MOSFET Easy Drive series combines excellent

switching performance without sacrificing ease of use and EMI issues

for both hard and soft switching topologies.

N−CHANNEL MOSFET

Features

• 650 V @ T = 150°C, Typ.

• R

= 224 mW

• 100% Avalanche Tested

DS(on)

• Pb−Free, Halogen Free / BFR Free and are RoHS Compliant

Applications

• Computing / Display Power Supplies

• Telecom / Server Power Supplies

• Lighting / Charger / Adapter / Industrial Power Supplies

DPAK

CASE 369AS

MARKING DIAGRAM

ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Parameter

Drain−to−Source Voltage

Symbol

Value

600

Unit

DSS

T280N

60S5Z

Gate−to−Source Voltage

AYWWZZ

AC (f > 1 Hz)

Continuous Drain Current

= 25°C

= 100°C

= 25°C

Power Dissipation

T280N60S5Z = Specific Device Code

Pulsed Drain Current (Note 1)

= Assembly Location

= Year

= Work Week

= Lot Code

Pulsed Source Current

(Body Diode) (Note 1)

Operating Junction and Storage Temperature T , T

Range

−55 to

+150

°C

STG

Source Current (Body Diode)

ORDERING INFORMATION

Single Pulse Avalanche

Energy

I = 2.9 A

= 25 W

†

Device

Package

Shipping

Avalanche Current

2.9

0.89

120

NTD280N60S5Z

DPAK

(Pb−Free)

2500 / Tape &

Reel

Repetitive Avalanche Energy (Note 1)

MOSFET dv/dt

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specification

Brochure, BRD8011/D.

dv/dt

V/ns

Peak Diode Recovery dv/dt (Note 2)

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

*Drain current limited by maximum junction temperature.

1. Repetitive rating: pulse−width limited by maximum junction temperature.

2. I ≤ 5.5 A, di/dt ≤ 200 A/s, V ≤ 400 V, starting T = 25°C.

Publication Order Number:

April, 2023 − Rev. 1

NTD280N60S5Z/D

12 3 4 5 6 7

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与NTD280N60S5Z相关器件

型号	品牌	获取价格	描述	数据表
NTD2955	ONSEMI	获取价格	Power MOSFET
NTD2955_V01	ONSEMI	获取价格	Power MOSFET â60 V, â12 A, PâChannel DP
NTD2955-001	ONSEMI	获取价格	Power MOSFET
NTD2955-001G	ONSEMI	获取价格	暂无描述
NTD2955-1	ONSEMI	获取价格	12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
NTD2955-1G	ONSEMI	获取价格	Power MOSFET
NTD2955-1G	ROCHESTER	获取价格	12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369D-01, DPAK-3
NTD2955D	ONSEMI	获取价格	Power MOSFET
NTD2955G	ONSEMI	获取价格	Power MOSFET
NTD2955G	ROCHESTER	获取价格	12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, CASE 369C-01, DPAK-3

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