Datasheet > NTD2955T4G

NTD2955T4G

更新时间： 2024-09-28 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
6页	504K
描述
种类:P-Channel;漏源导通电阻:-60V;持续漏极电流（Id）（在25°C时）:-12A;Vgs(th)(V):±20;漏源导通电阻:170mΩ@-10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTD2955T4G 数据手册

UMW

NTD2955

-60V P-Channel MOSFET

General Description

This Power MOSFET is designed to withstand high energy in the

avalanche and commutation modes. Designed for low−voltage, high−

speed switching applications in power supplies, converters, and power

motor controls, these devices are particularly well suited for bridge

circuits where diode speed and commutating safe operating areas are

critical and offer an additional safety margin against unexpected

voltage transients.

Features

V_DS(V) = -60V

•

R_DS(on)

150 mW

(V_GS= -10V)

•

I_D= -12A (V_GS= -10V)

•

• Avalanche Energy Specified

• I and V Specified at Elevated Temperature

DSS

DS(on)

• Designed for Low−Voltage, High−Speed Switching Applications and

to Withstand High Energy in the Avalanche and Commutation Modes

MAXIMUM RATINGS

Rating

C unless otherwise noted)

= 25

Symbol

Value

Unit

Drain−to−Source Voltage

DSS

−60

Vdc

Gate−to−Source Voltage

− Continuous

± 20

± 25

Vdc

Vpk

GSM

− Non−repetitive (t ≤ 10 ms)

Drain Current

Drain Current − Continuous @ T = 25°C

−12

−36

Adc

Apk

Drain Current − Single Pulse (t ≤ 10 ms)

Total Power Dissipation @ T = 25°C

T , T

−55 to

175

°C

stg

Range

Operating and Storage Temperature

Single Pulse Drain−to−Source Avalanche

216

Energy − Starting T = 25°C

(V = 25 Vdc, V = 10 Vdc, Peak

I = 12 Apk, L = 3.0 mH, R = 25 W)

Thermal Resistance

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

2.73

71.4

100

°C/W

°C

Maximum Lead Temperature for Soldering

Purposes, 1/8 in. from case for

10 seconds

260

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are

individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1 in pad size

(Cu area = 1.127 in ).

2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in ).

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6

中文翻译

下载PDF

与NTD2955T4G相关器件

型号	品牌	获取价格	描述	数据表
NTD30	EDI	获取价格	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD3055-094	ONSEMI	获取价格	Power MOSFET 12 A, 60 V
NTD3055-094/D	ETC	获取价格	Power MOSFET 12 Amps， 60 Volts
NTD3055-094-1	ONSEMI	获取价格	Power MOSFET 12 A, 60 V
NTD3055-094-1G	ONSEMI	获取价格	Power MOSFET 12 A, 60 V
NTD3055-094G	ONSEMI	获取价格	Power MOSFET 12 A, 60 V
NTD3055-094T4	ONSEMI	获取价格	Power MOSFET 12 A, 60 V
NTD3055-094T4G	ONSEMI	获取价格	Power MOSFET 12 A, 60 V
NTD3055-150	ONSEMI	获取价格	Power MOSFET 9.0 A, 60 V
NTD3055-150	ROCHESTER	获取价格	9A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3

与NTD2955T4G相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

20
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

16
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

18
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

29

产品中心

服务支持

精选活动

关于我们

帮助中心

NTD2955T4G

NTD2955T4G 数据手册

与NTD2955T4G相关器件

与NTD2955T4G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

NTD2955T4G

NTD2955T4G 数据手册

与NTD2955T4G相关器件

与NTD2955T4G相关文章

您还可以找

您在本页遇到什么问题？