Datasheet > NTD25P03LG

NTD25P03LG

更新时间： 2024-11-19 17:15:47

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	382K
描述
种类:P-Channel;漏源电压（Vdss）:-30V;持续漏极电流（Id）（在25°C时）:-26A;Vgs(th)(V):±20;漏源导通电阻:43mΩ@-4.5V

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NTD25P03LG 数据手册

UMW

NTD25P03

P-Channel -30V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V) = -30V

RDS(ON)

43m

52m

(VGS

-4.5V)

-2.5V)

FEATURES

•

Halogen-free

APPLICATIONS

•

Load Switch

Notebook Adaptor Switch

P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS

Parameter

T = 25 °C, unless otherwise noted

Symbol

V_DS

Limit

- 30

Unit

Drain-Source Voltage

V_GS

Gate-Source Voltage

± 20

T_C= 25 °C

- 26

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

- 21

Continuous Drain Current (T_J= 150 °C)

I_D

- 12.9^{a, b}

- 9.6^{a, b}

- 112

- 4.1

I_DM

I_S

Pulsed Drain Current

T_C= 25 °C

T_A= 25 °C

Continuous Source-Drain Diode Current

- 2.2^{a, b}

I_AS

Avalanche Current

- 20

L = 0.1 mH

E_AS

Single-Pulse Avalanche Energy

_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

2.7^{a, b}

1.7^{a, b}

- 55 to 150

T_J, T_stg

Operating Junction and Storage Temperature Range

°C

THERMAL RESISTANCE RATINGS

Parameter

Maximum Junction-to-Ambient^{a, c}

Symbol

Typical

Maximum

Unit

°C/W

R_thJA

R_thJF

t ≤ 10 s

Maximum Junction-to-Foot

Steady State

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. t = 10 s.

c. Maximum under Steady State conditions is 85 °C/W.

d. Based on T_C= 25 °C.

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UTD Semiconductor Co.,Limited

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