Datasheet > NTD25P03LT4G

NTD25P03LT4G

更新时间： 2024-11-18 03:45:51

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
9页	160K
描述
Power MOSFET -25 Amp, -30 Volt

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数据手册
替代型号

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NTD25P03LT4G 数据手册

NTD25P03L

Power MOSFET

−25 Amp, −30 Volt

Logic Level P−Channel DPAK

Designed for low voltage, high speed switching applications and to

withstand high energy in the avalanche and commutation modes. The

source−to−drain diode recovery time is comparable to a discrete fast

recovery diode.

http://onsemi.com

Typ

I Max

(BR)DSS

DS(on)

−30 V

51 mW @ 5.0 V

−25 A

Features

• Pb−Free Packages are Available

P−Channel

Typical Applications

• PWM Motor Controls

• Power Supplies

• Converters

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Rating

Symbol

Value

Unit

Drain−to−Source Voltage

DSS

−30

Gate−to−Source Voltage

− Continuous

Drain

GSM

"15

"20

− Non−Repetitive (tp ≤ 10 ms)

Vpk

DPAK

CASE 369C

STYLE 2

Drain Current

− Continuous @ T = 25°C

−25

−75

Apk

− Single Pulse (t ≤ 10 ms)

Total Power Dissipation @ T = 25°C

Gate

Drain

Operating and Storage Temperature Range

T , T

−55 to

+150

°C

stg

Source

Single Pulse Drain−to−Source Avalanche

200

°C/W

°C

Energy − Starting T = 25°C

Drain

(V = 25 Vdc, V = 5.0 Vdc,

Peak I = 20 Apk, L = 1.0 mH, R = 25 W)

DPAK−3

CASE 369D

STYLE 2

Thermal Resistance

− Junction−to−Case

1.65

120

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

Maximum Lead Temperature for Soldering

Purposes, (1/8 in from case for 10 seconds)

260

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using the minimum recommended

pad size.

Gate Drain Source

= Year

= Work Week

= Device Code

= Pb−Free Package

25P03L

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 7 of this data sheet.

Publication Order Number:

March, 2006 − Rev. 3

NTD25P03L/D

12 3 4 5 6 7...9

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NTD25P03LT4G 替代型号

型号	品牌	替代类型	描述	数据表
NTD25P03L1G	ONSEMI	类似代替	Power MOSFET -25 Amp, -30 Volt
NTD25P03LRLG	ONSEMI	类似代替	Power MOSFET -25 Amp, -30 Volt
NTD25P03LG	ONSEMI	类似代替	Power MOSFET

与NTD25P03LT4G相关器件

型号	品牌	获取价格	描述	数据表
NTD26N08	ONSEMI	获取价格	TRANSISTOR 80 V, 0.041 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3, FET Genera
NTD26N08/D	ETC	获取价格	80 V Power MOSFET
NTD26N08L	ONSEMI	获取价格	80V, 0.037ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
NTD280N60S5Z	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® V, Easy Dr
NTD2955	ONSEMI	获取价格	Power MOSFET
NTD2955_V01	ONSEMI	获取价格	Power MOSFET â60 V, â12 A, PâChannel DP
NTD2955-001	ONSEMI	获取价格	Power MOSFET
NTD2955-001G	ONSEMI	获取价格	暂无描述
NTD2955-1	ONSEMI	获取价格	12A, 60V, 0.18ohm, P-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3
NTD2955-1G	ONSEMI	获取价格	Power MOSFET

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