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NTD24N06LT4G

更新时间： 2024-11-18 06:00:43

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	82K
描述
Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK

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NTD24N06LT4G 数据手册

NTD24N06L

Power MOSFET

24 Amps, 60 Volts

Logic Level, N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

24 AMPERES, 60 VOLTS

Features

R_DS(on)= 0.036 W (Typ)

• Pb−Free Packages are Available

N−Channel

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Vdc

MARKING DIAGRAMS

& PIN ASSIGNMENTS

Drain−to−Source Voltage

DSS

DGR

Drain−to−Gate Voltage (R = 10 MW)

Gate−to−Source Voltage

− Continuous

Drain

"15

"20

− Non−repetitive (t v10 ms)

DPAK

CASE 369C

(Surface Mount)

STYLE 2

Drain Current

− Continuous @ T = 25°C

Adc

Apk

− Continuous @ T = 100°C

− Single Pulse (t v10 ms)

Gate

Total Power Dissipation @ T = 25°C

62.5

0.42

1.88

1.36

W/°C

Drain

Source

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 1)

Total Power Dissipation @ T = 25°C (Note 2)

Operating and Storage Temperature Range

T , T

−55 to

+175

°C

Drain

stg

DPAK

CASE 369D

(Straight Lead)

STYLE 2

Single Pulse Drain−to−Source Avalanche

162

Energy − Starting T = 25°C

(V = 50 Vdc, V = 5.0 Vdc,

L = 1.0 mH, I (pk) = 18 A, V = 60 Vdc)

Thermal Resistance

°C/W

°C

− Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

2.4

110

Gate Drain Source

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

260

= Year

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

24N6L

= Work Week

= Device Code

= Pb−Free Package

1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.

2. When surface mounted to an FR4 board using minimum recommended pad

size.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Semiconductor Components Industries, LLC, 2005

Publication Order Number:

August, 2005 − Rev. 2

NTD24N06L/D

12 3 4 5 6 7 8

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NTD24N06LT4G 替代型号

型号	品牌	替代类型	描述	数据表
NTD24N06LG	ONSEMI	类似代替	Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
NTD24N06L	ONSEMI	类似代替	Power MOSFET 24 Amps, 60 Volts Logic Level, N−Channel DPAK
STD20NF06T4	STMICROELECTRONICS	功能相似	N-CHANNEL 60V - 0.032OHM - 24A DPAK STripFET TM II POWER MOSFET

与NTD24N06LT4G相关器件

型号	品牌	获取价格	描述	数据表
NTD24N06T4	ONSEMI	获取价格	Power MOSFET 60 V, 24 A, N−Channel DPAK
NTD24N06T4G	ONSEMI	获取价格	Power MOSFET 60 V, 24 A, N−Channel DPAK
NTD25	EDI	获取价格	HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS
NTD250N65S3H	ONSEMI	获取价格	Power MOSFET, N-Channel, SUPERFET® III, FAST,
NTD25P03	ONSEMI	获取价格	Power MOSFET
NTD25P03L	ONSEMI	获取价格	Power MOSFET
NTD25P03L_06	ONSEMI	获取价格	Power MOSFET -25 Amp, -30 Volt
NTD25P03L1	ONSEMI	获取价格	Power MOSFET
NTD25P03L1G	ONSEMI	获取价格	Power MOSFET -25 Amp, -30 Volt
NTD25P03LG	ONSEMI	获取价格	Power MOSFET

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