NTD23N03RG

更新时间： 2024-01-02 03:44:33

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	67K
描述
23 Amps, 25 Volts, N−Channel DPAK

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中文翻译

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数据手册
替代型号

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NTD23N03RG 数据手册

NTD23N03R

Power MOSFET

23 Amps, 25 Volts, N−Channel DPAK

Features

http://onsemi.com

• Pb−Free Packages are Available

• Planar HD3e Process for Fast Switching Performance

TYP

I MAX

• Low R

to Minimize Conduction Loss

(BR)DSS

DS(on)

• Low C to Minimize Driver Loss

25 V

32 mW

23 A

iss

• Low Gate Charge

• Optimized for High Side Switching Requirements in

N−CHANNEL

High−Efficiency DC−DC Converters

MAXIMUM RATINGS (T = 25°C unless otherwise specified)

Parameter

Drain−to−Source Voltage

Symbol

Value

Unit

Vdc

DSS

Gate−to−Source Voltage − Continuous

±20

MARKING

DIAGRAMS

Thermal Resistance, Junction−to−Case

5.6

22.3

°C/W

Total Power Dissipation @ T = 25°C

Drain Current

− Continuous @ T = 25°C, Chip

− Continuous @ T = 25°C,

17.1

Drain

Limited by Package

− Single Pulse

DPAK

CASE 369AA

(Surface Mounted)

STYLE 2

Thermal Resistance, Junction−to−Ambient

(Note 1)

°C/W

Total Power Dissipation @ T = 25°C

Drain Current − Continuous @ T = 25°C

1.64

4.5

Gate

Drain

Thermal Resistance, Junction−to−Ambient

(Note 2)

110

°C/W

Source

Total Power Dissipation @ T = 25°C

1.14

3.8

Drain Current − Continuous @ T = 25°C

Drain

Operating and Storage Temperature Range

T , T

−55 to

150

°C

stg

DPAK−3

CASE 369D

(Straight Lead)

STYLE 2

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

Gate Drain Source

1. When surface mounted to an FR4 board using 0.5 sq in pad size.

2. When surface mounted to an FR4 board using minimum recommended pad

size.

T23N03

= Device Code

= Assembly Location

= Year

= Work Week

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 4

NTD23N03R/D

12 3 4 5 6 7 8

中文翻译

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NTD23N03RG 替代型号

型号	品牌	替代类型	描述	数据表
NTD23N03RT4G	ONSEMI	类似代替	23 Amps, 25 Volts, N−Channel DPAK
NTD23N03RT4	ONSEMI	类似代替	23 Amps, 25 Volts, N−Channel DPAK
NTD23N03R	ONSEMI	类似代替	23 Amps, 25 Volts, N−Channel DPAK

与NTD23N03RG相关器件

型号	品牌	获取价格	描述	数据表
NTD23N03RT4	ONSEMI	获取价格	23 Amps, 25 Volts, N−Channel DPAK
NTD23N03RT4G	ONSEMI	获取价格	23 Amps, 25 Volts, N−Channel DPAK
NTD2405	CRYDOM	获取价格	THE GLOBAL EXPERT IN SOLID STATE RELAY TECHNOLOGY
NTD2405EF	CRYDOM	获取价格	暂无描述
NTD2405EF-10	CRYDOM	获取价格	Solid State Relay
NTD2405F	CRYDOM	获取价格	Optoelectronic Device
NTD2405F-10	CRYDOM	获取价格	Solid State Relay
NTD2406.1	ONSEMI	获取价格	Power MOSFET 60 Volt, 24 Amp
NTD2406.1G	ONSEMI	获取价格	Power MOSFET 60 Volt, 24 Amp
NTD24061	ONSEMI	获取价格	Power MOSFET 60 Volt, 24 Amp NâChannel DPAK

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