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NTD20N03L27-1G PDF预览

NTD20N03L27-1G

更新时间: 2024-11-02 03:45:51
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
6页 63K
描述
Power MOSFET

NTD20N03L27-1G 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:LEAD FREE, CASE 369D-01, DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
Factory Lead Time:1 week风险等级:5.28
其他特性:AVALANCHE RATED雪崩能效等级(Eas):288 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):20 A
最大漏极电流 (ID):20 A最大漏源导通电阻:0.031 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1.75 W
最大脉冲漏极电流 (IDM):60 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTD20N03L27-1G 数据手册

 浏览型号NTD20N03L27-1G的Datasheet PDF文件第2页浏览型号NTD20N03L27-1G的Datasheet PDF文件第3页浏览型号NTD20N03L27-1G的Datasheet PDF文件第4页浏览型号NTD20N03L27-1G的Datasheet PDF文件第5页浏览型号NTD20N03L27-1G的Datasheet PDF文件第6页 
NTD20N03L27  
Power MOSFET  
20 Amps, 30 Volts, N−Channel DPAK  
This logic level vertical power MOSFET is a general purpose part  
that provides the “best of design” available today in a low cost power  
package. Avalanche energy issues make this part an ideal design in.  
The drain−to−source diode has a ideal fast but soft recovery.  
http://onsemi.com  
Features  
20 A, 30 V, RDS(on) = 27 mW  
Pb−Free Packages are Available  
N−Channel  
Ultra−Low R , Single Base, Advanced Technology  
DS(on)  
SPICE Parameters Available  
D
Diode is Characterized for use in Bridge Circuits  
I  
and V  
Specified at Elevated Temperatures  
DSS  
DS(on)  
High Avalanche Energy Specified  
ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0  
G
Typical Applications  
S
Power Supplies  
Inductive Loads  
PWM Motor Controls  
MARKING  
DIAGRAMS  
Replaces MTD20N03L in many Applications  
4
Drain  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
C
4
DPAK  
Rating  
Symbol  
Value  
Unit  
CASE 369C  
STYLE 2  
Drain−to−Source Voltage  
V
30  
30  
Vdc  
Vdc  
Vdc  
DSS  
2
1
Drain−to−Gate Voltage (R = 1.0 MW)  
V
DGR  
GS  
3
Gate−to−Source Voltage  
− Continuous  
2
1
Gate  
3
V
V
"20  
"24  
GS  
GS  
Drain  
− Non−Repetitive (t v10 ms)  
Source  
p
Drain Current  
4
− Continuous @ T = 25_C  
I
I
20  
16  
60  
Adc  
Apk  
A
D
D
Drain  
− Continuous @ T = 100_C  
A
− Single Pulse (t v10 ms)  
p
4
I
DM  
DPAK−3  
CASE 369D  
STYLE 2  
Total Power Dissipation @ T = 25_C  
P
74  
0.6  
1.75  
W
W/°C  
W
A
D
Derate above 25°C  
Total Power Dissipation @ T = 25°C (Note 1)  
C
Operating and Storage Temperature Range  
T , T  
55 to  
150  
°C  
J
stg  
1
2
3
Single Pulse Drain−to−Source Avalanche  
E
AS  
288  
mJ  
1
2
3
Energy − Starting T = 25°C  
J
Gate Drain Source  
(V = 30 Vdc, V = 5 Vdc, L = 1.0 mH,  
DD  
GS  
I
= 24 A, V = 34 Vdc)  
L(pk)  
DS  
20N3L  
A
Y
= Device Code  
= Assembly Location  
= Year  
Thermal Resistance  
− Junction−to−Case  
°C/W  
R
R
R
1.67  
100  
71.4  
q
JC  
JA  
JA  
− Junction−to−Ambient  
− Junction−to−Ambient (Note 1)  
q
q
WW  
= Work Week  
Maximum Lead Temperature for Soldering  
Purposes, 1/8from case for 10 seconds  
T
260  
°C  
L
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
1. When surface mounted to an FR4 board using the minimum recommended  
pad size and repetitive rating; pulse width limited by maximum junction  
temperature.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 2  
NTD20N03L27/D  
 

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