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NTD20N06G PDF预览

NTD20N06G

更新时间： 2024-11-17 22:28:47
品牌 Logo 应用领域
安森美 - ONSEMI 晶体晶体管开关脉冲
页数 文件大小 规格书
8页 83K
描述
Power MOSFET

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中文翻译

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NTD20N06G 技术参数

是否无铅： 不含铅生命周期：End Of Life
包装说明：SMALL OUTLINE, R-PSSO-G2针数：3
Reach Compliance Code：not_compliantHTS代码：8541.29.00.95
风险等级：5.89Base Number Matches：1

NTD20N06G 数据手册

 浏览型号NTD20N06G的Datasheet PDF文件第2页浏览型号NTD20N06G的Datasheet PDF文件第3页浏览型号NTD20N06G的Datasheet PDF文件第4页浏览型号NTD20N06G的Datasheet PDF文件第5页浏览型号NTD20N06G的Datasheet PDF文件第6页浏览型号NTD20N06G的Datasheet PDF文件第7页 
NTD20N06  
Power MOSFET  
20 Amps, 60 Volts, N−Channel DPAK  
Designed for low voltage, high speed switching applications in  
power supplies, converters and power motor controls and bridge  
circuits.  
Features  
http://onsemi.com  
• Pb−Free Packages are Available  
• Lower R  
DS(on)  
V
R
TYP  
I MAX  
D
(BR)DSS  
DS(on)  
• Lower V  
• Lower Capacitances  
DS(on)  
60 V  
37.5 mW  
20 A  
• Lower Total Gate Charge  
N−Channel  
• Lower and Tighter V  
SD  
D
• Lower Diode Reverse Recovery Time  
• Lower Reverse Recovery Stored Charge  
Typical Applications  
• Power Supplies  
G
• Converters  
• Power Motor Controls  
• Bridge Circuits  
S
MARKING  
DIAGRAMS  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
Rating  
Symbol  
Value  
Unit  
4
Drain−to−Source Voltage  
V
DSS  
60  
60  
Vdc  
Vdc  
Vdc  
Drain  
Drain−to−Gate Voltage (R = 10 MW)  
V
DGR  
GS  
4
Gate−to−Source Voltage  
− Continuous  
DPAK  
CASE 369C  
STYLE 2  
V
V
"20  
"30  
GS  
GS  
− Non−repetitive (t v10 ms)  
p
2
1
Drain Current  
Adc  
Apk  
3
− Continuous @ T = 25°C  
I
D
20  
10  
60  
2
A
1
Gate  
3
− Continuous @ T = 100°C  
I
D
Drain  
A
Source  
− Single Pulse (t v10 ms)  
I
DM  
p
Total Power Dissipation @ T = 25°C  
Derate above 25°C  
P
60  
W
W/°C  
W
A
D
4
0.40  
1.88  
1.36  
Drain  
Total Power Dissipation @ T = 25°C (Note 1)  
A
4
Total Power Dissipation @ T = 25°C (Note 2)  
W
A
DPAK−3  
CASE 369D  
STYLE 2  
Operating and Storage Temperature Range  
T , T  
J
−55 to  
175  
°C  
stg  
Single Pulse Drain−to−Source Avalanche  
E
AS  
170  
mJ  
Energy − Starting T = 25°C  
1
J
2
(V = 25 Vdc, V = 10 Vdc,  
DD  
GS  
3
L = 1.0 mH, I (pk) = 18.4 A, V = 60 Vdc)  
L
DS  
1
2
3
Thermal Resistance  
− Junction−to−Case  
− Junction−to−Ambient (Note 1)  
− Junction−to−Ambient (Note 2)  
°C/W  
°C  
Gate Drain Source  
R
R
R
2.5  
80  
110  
q
JC  
JA  
JA  
q
q
20N06  
A
Y
= Device Code  
= Assembly Location  
= Year  
Maximum Lead Temperature for Soldering  
Purposes, 1/8″ from case for 10 seconds  
T
260  
L
WW  
= Work Week  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
1. When surface mounted to an FR4 board using the minimum recommended  
pad size.  
2. When surface mounted to an FR4 board using the 0.5 sq in drain pad size.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
August, 2004 − Rev. 6  
NTD20N06/D  
 
12345678

中文翻译

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NTD20N06G 替代型号

型号 品牌 替代类型 描述 数据表
NTD20N06LT4G ONSEMI

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