NTD20N03L27

更新时间： 2024-11-01 22:28:47

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
6页	63K
描述
Power MOSFET

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NTD20N03L27 数据手册

NTD20N03L27

Power MOSFET

20 Amps, 30 Volts, N−Channel DPAK

This logic level vertical power MOSFET is a general purpose part

that provides the “best of design” available today in a low cost power

package. Avalanche energy issues make this part an ideal design in.

The drain−to−source diode has a ideal fast but soft recovery.

http://onsemi.com

Features

20 A, 30 V, R_DS(on)= 27 mW

• Pb−Free Packages are Available

N−Channel

• Ultra−Low R , Single Base, Advanced Technology

DS(on)

• SPICE Parameters Available

• Diode is Characterized for use in Bridge Circuits

• I

and V

Specified at Elevated Temperatures

DSS

DS(on)

• High Avalanche Energy Specified

• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0

Typical Applications

• Power Supplies

• Inductive Loads

• PWM Motor Controls

MARKING

DIAGRAMS

• Replaces MTD20N03L in many Applications

Drain

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

DPAK

Rating

Symbol

Value

Unit

CASE 369C

STYLE 2

Drain−to−Source Voltage

Vdc

DSS

Drain−to−Gate Voltage (R = 1.0 MW)

DGR

Gate−to−Source Voltage

− Continuous

Gate

"20

"24

Drain

− Non−Repetitive (t v10 ms)

Source

Drain Current

− Continuous @ T = 25_C

Adc

Apk

Drain

− Continuous @ T = 100_C

− Single Pulse (t v10 ms)

DPAK−3

CASE 369D

STYLE 2

Total Power Dissipation @ T = 25_C

0.6

1.75

W/°C

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 1)

Operating and Storage Temperature Range

T , T

−55 to

150

°C

stg

Single Pulse Drain−to−Source Avalanche

288

Energy − Starting T = 25°C

Gate Drain Source

(V = 30 Vdc, V = 5 Vdc, L = 1.0 mH,

= 24 A, V = 34 Vdc)

L(pk)

20N3L

= Device Code

= Assembly Location

= Year

Thermal Resistance

− Junction−to−Case

°C/W

1.67

100

71.4

− Junction−to−Ambient

− Junction−to−Ambient (Note 1)

= Work Week

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

°C

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended

pad size and repetitive rating; pulse width limited by maximum junction

temperature.

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 2

NTD20N03L27/D

12 3 4 5 6

中文翻译

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NTD20N03L27 替代型号

型号	品牌	替代类型	描述	数据表
NTD20N03L27-1G	ONSEMI	完全替代	Power MOSFET
NTD20N03L27G	ONSEMI	完全替代	Power MOSFET
NTD20N03L27T4G	ONSEMI	类似代替	Power MOSFET

与NTD20N03L27相关器件

型号	品牌	获取价格	描述	数据表
NTD20N03L27/D	ETC	获取价格	Power MOSFET 20 Amps， 30 Volts
NTD20N03L271	ONSEMI	获取价格	TRANSISTOR 20 A, 30 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369D-01, DPAK-3, FET
NTD20N03L27-1	ONSEMI	获取价格	Power MOSFET
NTD20N03L27-1G	ONSEMI	获取价格	Power MOSFET
NTD20N03L27G	ONSEMI	获取价格	Power MOSFET
NTD20N03L27T4	ONSEMI	获取价格	Power MOSFET
NTD20N03L27T4G	ONSEMI	获取价格	Power MOSFET
NTD20N03L27T4G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
NTD20N06	ONSEMI	获取价格	Power MOSFET
NTD20N06/D	ETC	获取价格	Power MOSFET 20 Amps， 60 Volts

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