Datasheet > 晶体管 > 功率场效应晶体管> NTD3055L104G

NTD3055L104G

更新时间： 2024-01-27 16:34:54

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	77K
描述
Power MOSFET

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中文翻译

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数据手册
替代型号

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NTD3055L104G 数据手册

NTD3055L104

Power MOSFET

12 Amps, 60 Volts, Logic Level

N−Channel DPAK

Designed for low voltage, high speed switching applications in

power supplies, converters and power motor controls and bridge

circuits.

http://onsemi.com

Features

TYP

I MAX

(BR)DSS

DS(on)

• Pb−Free Packages are Available

• Lower R

60 V

104 mW

12 A

DS(on)

• Lower V

• Tighter V Specification

• Lower Diode Reverse Recovery Time

• Lower Reverse Recovery Stored Charge

DS(on)

N−Channel

Typical Applications

• Power Supplies

• Converters

• Power Motor Controls

• Bridge Circuits

MARKING

DIAGRAMS

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

Rating

Symbol Value

Unit

Vdc

Drain−to−Source Voltage

Drain

DSS

Drain−to−Gate Voltage (R = 10 MW)

DGR

DPAK

CASE 369C

STYLE 2

Gate−to−Source Voltage, Continuous

"15

"20

− Non−Repetitive (t v10 ms)

Drain Current

− Continuous @ T = 25°C

Adc

Apk

− Continuous @ T = 100°C

Drain

− Single Pulse (t v10 ms)

Gate

Source

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.32

2.1

W/°C

Drain

Total Power Dissipation @ T = 25°C (Note 1)

Total Power Dissipation @ T = 25°C (Note 2)

1.5

DPAK−3

CASE 369D

STYLE 2

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

T , T

−55 to

+175

°C

stg

Energy − Starting T = 25°C

(V = 25 Vdc, V = 5.0 Vdc, L = 1.0 mH

= 11 A, V = 60 Vdc)

L(pk)

Thermal Resistance, − Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

3.13

71.4

100

°C/W

°C

Gate Drain Source

55L104

= Device Code

= Assembly Location

= Year

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

= Work Week

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits

are exceeded, device functional operation is not implied, damage may occur

and reliability may be affected.

ORDERING INFORMATION

See detailed ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

1. When surface mounted to an FR4 board using 1″ pad size,

(Cu Area 1.127 in ).

2. When surface mounted to an FR4 board using the minimum recommended

pad size, (Cu Area 0.412 in ).

Semiconductor Components Industries, LLC, 2004

Publication Order Number:

August, 2004 − Rev. 4

NTD3055L104/D

12 3 4 5 6 7 8

中文翻译

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NTD3055L104G 替代型号

型号	品牌	替代类型	描述	数据表
NTD3055L104-1G	ONSEMI	类似代替	Power MOSFET
NTD3055L104T4G	ONSEMI	类似代替	Power MOSFET
NTD18N06LT4G	ONSEMI	类似代替	Power MOSFET

与NTD3055L104G相关器件

型号	品牌	获取价格	描述	数据表
NTD3055L104T4	ONSEMI	获取价格	Power MOSFET
NTD3055L104T4G	ONSEMI	获取价格	Power MOSFET
NTD3055L104T4G	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时
NTD3055L170	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170.1G	ONSEMI	获取价格	Power MOSFET
NTD3055L170_12	ONSEMI	获取价格	Power MOSFET
NTD3055L170-1	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170-1G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK

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