Datasheet > NTD3055L104T4G

NTD3055L104T4G

更新时间： 2024-11-18 17:15:35

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
7页	434K
描述
种类:N-Channel;漏源电压（Vdss）:60V;持续漏极电流（Id）（在25°C时）:12A;Vgs(th)(V):±20

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

NTD3055L104T4G 数据手册

3055L104

60V N -Channel MOSFET

UMW

Features

•

Lower R_DS(on)

Lower V_DS(on)

Tighter V_SDSpecification

Lower Diode Reverse Recovery Time

Lower Reverse Recovery Stored Charge

Typical Applications

•

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

•

V_DS(V) = 60V

I_D= 12A (V_GS= 10V)

R_DS(ON)< 104mΩ (V _GS= 5V)

MAXIMUM RATINGS (T = 25 C unless otherwise noted)

Rating

Symbol

Value

Unit

Vdc

Drain−to−Source Voltage

DSS

Drain−to−Gate Voltage (R = 10 MW)

DGR

Gate−to−Source Voltage, Continuous

"15

"20

− Non−Repetitive (t v10 ms)

Drain Current

− Continuous @ T = 25°C

Adc

Apk

− Continuous @ T = 100°C

− Single Pulse (t v10 ms)

Total Power Dissipation @ T = 25°C

Derate above 25°C

0.32

2.1

W/°C

Total Power Dissipation @ T = 25°C (Note 1)

Total Power Dissipation @ T = 25°C (Note 2)

1.5

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

T , T

−55 to

+175

°C

stg

Energy − Starting T = 25°C

(V = 25 Vdc, V = 5.0 Vdc, L = 1.0 mH

= 11 A, V = 60 Vdc)

L(pk)

Thermal Resistance, − Junction−to−Case

− Junction−to−Ambient (Note 1)

− Junction−to−Ambient (Note 2)

3.13

71.4

100

°C/W

°C

Maximum Lead Temperature for Soldering

260

Purposes, 1/8″ from case for 10 seconds

Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are

individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded,

device functional operation is not implied, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in ).

2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in ).

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7

中文翻译

下载PDF

与NTD3055L104T4G相关器件

型号	品牌	获取价格	描述	数据表
NTD3055L170	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170.1G	ONSEMI	获取价格	Power MOSFET
NTD3055L170_12	ONSEMI	获取价格	Power MOSFET
NTD3055L170-1	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170-1G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD3055L170T4G	ONSEMI	获取价格	9.0 Amps, 60 Volts, Logic Level, N−Channel DPAK
NTD30N02	ONSEMI	获取价格	Power MOSFET 30 Amps, 24 Volts
NTD30N02	ROCHESTER	获取价格	30A, 24V, 0.0145ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369C-01, DPAK-3