Datasheet > NTD20N03L27T4G

NTD20N03L27T4G

更新时间： 2024-11-19 17:15:27

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	443K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:20A;Vgs(th)(V):±20;漏源导通电阻:27mΩ@10V;漏源导通电阻:31mΩ@4.5V

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NTD20N03L27T4G 数据手册

NTD20N03

U W

30V N-Channel MOSFET

Features

Ultra−Low R

, Single Base, Advanced Technology

DS(on)

•

SPICE Parameters Available

•

Diode is Characterized for use in Bridge Circuits

and V

Specified at Elevated Temperatures

(on)

DSS

High Avalanche Energy Specified

Typical Applications

Power Supplies

•

Inductive Loads

•

PWM Motor Controls

•

(V) = 30V

•

R_DS(ON)< 27mΩ (V_GS= 5V)

•

(T = 25 C unless otherwise noted)

MAXIMUM RATINGS

Rating

Symbol Value

Unit

Vdc

Drain−to−Source Voltage

DSS

DGR

Drain−to−Gate Voltage (R = 1.0 MW)

Gate−to−Source Voltage

− Continuous

− Non−Repetitive (t v10 ms)

Drain Current

− Continuous @ T = 25_C

Adc

Apk

− Continuous @ T = 100_C

− Single Pulse (t v10 ms)

Total Power Dissipation @ T = 25_C

0.6

1.75

W/°CW

Derate above 25°C

Total Power Dissipation @ T = 25°C (Note 1)

Operating and Storage Temperature Range

T , T

−55 to

150

°C

stg

Single Pulse Drain−to−Source Avalanche

288

Energy − Starting T = 25°C

(V = 30 Vdc, V = 5 Vdc, L = 1.0 mH,

= 24 A, V = 34 Vdc)

L(pk)

Thermal Resistance

− Junction−to−Case

°C/W

°C

1.67

100

71.4

− Junction−to−Ambient

− Junction−to−Ambient (Note 1)

Maximum Lead Temperature for Soldering

Purposes, 1/8″ from case for 10 seconds

260

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. When surface mounted to an FR4 board using the minimum recommended

pad size and repetitive rating; pulse width limited by maximum junction

temperature.

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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