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NTD18N06T4G PDF预览

NTD18N06T4G

更新时间: 2024-01-23 18:10:16
品牌 Logo 应用领域
安森美 - ONSEMI 开关脉冲晶体管
页数 文件大小 规格书
10页 213K
描述
功率 MOSFET,60V,18A,60mΩ,单 N 沟道,DPAK

NTD18N06T4G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:LEAD FREE, CASE 369C-01, DPAK-3
针数:3Reach Compliance Code:unknown
风险等级:5.15雪崩能效等级(Eas):72 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (ID):18 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:NOT SPECIFIED元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):54 A
认证状态:COMMERCIAL表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

NTD18N06T4G 数据手册

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