5秒后页面跳转
STP30NM60N PDF预览

STP30NM60N

更新时间: 2024-11-26 06:14:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
18页 769K
描述
N-channel 600 V, 0.1 Ω, 25 A, MDmesh™ II Power MOSFET TO-220, TO-220FP, TO-247, D2PAK, I2PAK

STP30NM60N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.81雪崩能效等级(Eas):900 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):25 A最大漏极电流 (ID):25 A
最大漏源导通电阻:0.13 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):190 W
最大脉冲漏极电流 (IDM):100 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP30NM60N 数据手册

 浏览型号STP30NM60N的Datasheet PDF文件第2页浏览型号STP30NM60N的Datasheet PDF文件第3页浏览型号STP30NM60N的Datasheet PDF文件第4页浏览型号STP30NM60N的Datasheet PDF文件第5页浏览型号STP30NM60N的Datasheet PDF文件第6页浏览型号STP30NM60N的Datasheet PDF文件第7页 
STB30NM60N,STI30NM60N,STF30NM60N  
STP30NM60N, STW30NM60N  
N-channel 600 V, 0.1 , 25 A, MDmesh™ II Power MOSFET  
TO-220, TO-220FP, TO-247, D2PAK, I2PAK  
Features  
RDS(on)  
max  
VDSS @  
TJmax  
Type  
ID  
PW  
3
3
1
2
1
STB30NM60N 650 V  
STI30NM60N 650 V  
<0.13Ω  
<0.13Ω  
<0.1325A(1) 40 W  
25A  
25A  
190 W  
190 W  
D²PAK  
I²PAK  
3
2
1
STF30NM60N 650 V  
STP30NM60N 650 V  
STW30NM60N 650 V  
TO-247  
<0.13Ω  
<0.13Ω  
25A  
25A  
190 W  
190 W  
3
3
1. Limited only by maximum temperature allowed  
2
2
1
1
100% avalanche tested  
TO-220FP  
TO-220  
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is designed using the  
second generation of MDmesh™ Technology.  
This revolutionary Power MOSFET associates a  
new vertical structure to the Company’s strip  
layout to yield one of the world’s lowest on-  
resistance and gate charge. It is therefore suitable  
for the most demanding high efficiency  
converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB30NM60N  
STI30NM60N  
STF30NM60N  
STP30NM60N  
STW30NM60N  
30NM60N  
30NM60N  
30NM60N  
30NM60N  
30NM60N  
PAK  
PAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
July 2008  
Rev 2  
1/18  
www.st.com  
18  

STP30NM60N 替代型号

型号 品牌 替代类型 描述 数据表
IPI60R125CP INFINEON

功能相似

CoolMOSTM Power Transistor
IPW60R125CP INFINEON

功能相似

CoolMOS Power Transistor
IPP60R125CP INFINEON

功能相似

CoolMOS Power Transistor

与STP30NM60N相关器件

型号 品牌 获取价格 描述 数据表
STP30NM60ND STMICROELECTRONICS

获取价格

N-channel 600V - 0.11ヘ - 25A TO-220/FP/D2PAK/
STP30NS15LFP STMICROELECTRONICS

获取价格

N-CHANNEL 150V - 0.085 W - 10A TO-220FP MESH
STP310N10F7 STMICROELECTRONICS

获取价格

N-channel 100 V, 2.3 mΩ typ., 180 A STripFET
STP315N10F7 STMICROELECTRONICS

获取价格

汽车级N沟道100 V、2.3 mOhm典型值、180 A STripFET F7功率MO
STP31N65M5 STMICROELECTRONICS

获取价格

N沟道650 V、0.124 Ohm典型值、22 A MDmesh M5功率MOSFET,
STP-32AMP4 POWERVOLT

获取价格

The Power Supply for Stepping Motors
STP32N05L STMICROELECTRONICS

获取价格

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP32N05LFI STMICROELECTRONICS

获取价格

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP32N06 STMICROELECTRONICS

获取价格

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
STP32N06L STMICROELECTRONICS

获取价格

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR