Datasheet > STP315N10F7

STP315N10F7

更新时间： 2023-12-20 18:45:44

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	559K
描述
汽车级N沟道100 V、2.3 mOhm典型值、180 A STripFET F7功率MOSFET，TO-220封装

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STP315N10F7 数据手册

STP315N10F7

Automotive-grade N-channel 100 V, 2.3 mΩ typ., 180 A

STripFET™ F7 Power MOSFET in a TO-220 package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max

I_D

STP315N10F7

100 V

2.7 mΩ

180 A

Features



Designed for automotive applications and

AEC-Q101 qualified



Among the lowest R_DS(on)on the market

Excellent FoM (figure of merit)

Low C_rss/C_issratio for EMI immunity

High avalanche ruggedness

Figure 1: Internal schematic diagram

Applications



Switching applications

D(2, TAB)

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

G(1)

S(3)

AM01475v1_Tab

Table 1: Device summary

Order code

Marking

Package

TO-220

Packaging

STP315N10F7

315N10F7

Tube

August 2016

DocID025348 Rev 4

1/13

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...13

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