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STP30NM50N PDF预览

STP30NM50N

更新时间: 2024-02-10 00:12:20
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
18页 609K
描述
27A, 500V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN

STP30NM50N 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.8
雪崩能效等级(Eas):900 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):27 A最大漏极电流 (ID):27 A
最大漏源导通电阻:0.115 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):190 W最大脉冲漏极电流 (IDM):108 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP30NM50N 数据手册

 浏览型号STP30NM50N的Datasheet PDF文件第2页浏览型号STP30NM50N的Datasheet PDF文件第3页浏览型号STP30NM50N的Datasheet PDF文件第4页浏览型号STP30NM50N的Datasheet PDF文件第5页浏览型号STP30NM50N的Datasheet PDF文件第6页浏览型号STP30NM50N的Datasheet PDF文件第7页 
STB30NM50N,STI30NM50N,STF30NM50N  
STP30NM50N, STW30NM50N  
N-channel 500 V, 0.090 , 27 A MDmesh™ II Power MOSFET  
D2PAK, I2PAK, TO-220FP, TO-220, TO-247  
Features  
RDS(on)  
max  
VDSS  
(@Tjmax)  
Type  
ID  
3
3
1
2
1
STB30NM50N  
STI30NM50N  
STF30NM50N  
STP30NM50N  
STW30NM50N  
550 V  
550 V  
550 V  
550 V  
550 V  
< 0.115 Ω  
< 0.115 Ω  
< 0.115 27 A(1)  
27 A  
27 A  
D²PAK  
I²PAK  
3
2
1
TO-247  
< 0.115 Ω  
< 0.115 Ω  
27 A  
27 A  
3
3
1. Limited only by maximum temperature allowed  
2
2
1
1
100% avalanche tested  
TO-220FP  
TO-22
Low input capacitance and gate charge  
Low gate input resistance  
Figure 1.  
Internal schematic diagram  
Application  
Switching applications  
Description  
This series of devices is digned using the  
second generation MDmesh™ Technology.  
This revolutionary Power MOSFET associates a  
new vertical structure to the Company’s strip  
layout to yield one of the world’s lowest on-  
resistae and gate charge. It is therefore suitable  
fothe most demanding high efficiency  
converters.  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
STB30NM50N  
STI30NM50N  
STF30NM50N  
STP30NM50N  
STW30NM50N  
30NM50N  
30NM50N  
30NM50N  
30NM50N  
30NM50N  
PAK  
PAK  
Tape and reel  
Tube  
TO-220FP  
TO-220  
TO-247  
Tube  
Tube  
Tube  
September 2008  
Rev 2  
1/18  
www.st.com  
18  

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