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STP30NE06L PDF预览

STP30NE06L

更新时间: 2024-02-01 09:31:05
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 108K
描述
N - CHANNEL 60V - 0.035 ohm - 30A - TO-220/TO-220FP STripFET POWER MOSFET

STP30NE06L 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:TO-220AB
包装说明:TO-220FP, 3 PIN针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.67Is Samacsys:N
雪崩能效等级(Eas):100 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):17 A最大漏极电流 (ID):17 A
最大漏源导通电阻:0.06 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):30 W最大脉冲漏极电流 (IDM):68 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STP30NE06L 数据手册

 浏览型号STP30NE06L的Datasheet PDF文件第2页浏览型号STP30NE06L的Datasheet PDF文件第3页浏览型号STP30NE06L的Datasheet PDF文件第4页浏览型号STP30NE06L的Datasheet PDF文件第5页浏览型号STP30NE06L的Datasheet PDF文件第6页浏览型号STP30NE06L的Datasheet PDF文件第7页 
STP30NE06L  
STP30NE06LFP  
N - CHANNEL 60V - 0.035 - 30A - TO-220/TO-220FP  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP30NE06L  
STP30NE06LFP  
60 V  
60 V  
< 0.05 Ω  
< 0.05 Ω  
30 A  
17 A  
TYPICAL RDS(on) = 0.035 Ω  
100% AVALANCHE TESTED  
LOW GATE CHARGE  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
3
2
2
DESCRIPTION  
1
1
This Power MOSFET is the latest developmentof  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalanche characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
TO-220  
TO-220FP  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP30NE06L STP30NE06LFP  
VDS  
VDGR  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
60  
60  
V
V
± 20  
V
o
Drain Current (continuous) at Tc = 25 C  
30  
21  
17  
12  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
A
I
DM()  
Drain Current (pulsed)  
120  
80  
68  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
30  
W
W/oC  
V
oC  
oC  
Derating Factor  
0.53  
0.2  
2000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/9  
March 1999  

STP30NE06L 替代型号

型号 品牌 替代类型 描述 数据表
STD86N3LH5 STMICROELECTRONICS

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