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STP3020 PDF预览

STP3020

更新时间: 2024-11-25 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
8页 86K
描述
N - CHANNEL 30V - 0.019ohm - 40A - TO-220 STripFET POWER MOSFET

STP3020 数据手册

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STP3020L  
N - CHANNEL 30V - 0.019  
- 40A - TO-220  
STripFET POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STP3020L  
30 V  
< 0.022 Ω  
40 A  
TYPICAL RDS(on) = 0.019 Ω  
LOW GATE CHARGE A 100oC  
APPLICATIONORIENTED  
CHARACTERIZATION  
DESCRIPTION  
3
This Power Mosfet is the latest development of  
STMicroelectronics unique ”Single Feature  
Size ” strip-based process. The resulting transi-  
stor shows extremely high packing density for low  
on-resistance, rugged avalance characteristics  
and less critical alignment steps therefore a re-  
markable manufacturingreproducibility.  
2
1
TO-220  
APPLICATIONS  
INTERNAL SCHEMATIC DIAGRAM  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-AC & DC-AC CONVERTERS IN HIGH  
PERFORMANCE VRMs  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
30  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
30  
V
20  
V
±
o
Drain Current (continuous) at Tc = 25 C  
40  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
28  
160  
A
I
DM()  
Drain Current (pulsed)  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
80  
W
Derating Factor  
0.53  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/8  
March 1999  

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