STP2N60

更新时间： 2024-09-26 22:42:39

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	201K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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中文翻译

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数据手册

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STP2N60 数据手册

STP2N60

STP2N60FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

I_D

STP2N60

STP2N60FI

600 V

< 3.5 Ω

2.9 A

2.2 A

■

TYPICAL R_DS(on)= 3.2 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

TO-220

ISOWATT220

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

CHOPPER REGULATORS, CONVERTERS,

MOTOR CONTROL, LIGHTING FOR

INDUSTRIAL AND CONSUMER

ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP2N60

STP2N60FI

V_DS

V_{DG R}

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

600

± 20

2.9

1.7

2.2

1.3

I_D

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

W/^oC

^oC

Derating Factor

0.56

0.28

2000

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

December 1996

12 3 4 5 6 7...10

中文翻译

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