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STP2N80 PDF预览

STP2N80

更新时间: 2024-11-22 22:42:39
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
10页 204K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

STP2N80 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.12
雪崩能效等级(Eas):85 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:800 V最大漏极电流 (Abs) (ID):2.4 A
最大漏极电流 (ID):2.4 A最大漏源导通电阻:7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):30 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
功耗环境最大值:90 W最大功率耗散 (Abs):90 W
最大脉冲漏极电流 (IDM):9.6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
最大开启时间(吨):107 nsBase Number Matches:1

STP2N80 数据手册

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STP2N80  
STP2N80FI  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
ID  
STP2N80  
STP2N80FI  
800 V  
800 V  
< 7 Ω  
< 7 Ω  
2.4 A  
1.5 A  
TYPICAL RDS(on) = 5 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INPUT CAPACITANCE  
LOW GATE CHARGE  
3
3
2
2
1
1
APPLICATION ORIENTED  
CHARACTERIZATION  
TO-220  
ISOWATT220  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
CONSUMER AND INDUSTRIAL LIGHTING  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP2N80  
STP2N80FI  
VDS  
VDG R  
VGS  
ID  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
800  
800  
± 20  
V
V
V
2.4  
1.5  
9.6  
90  
1.5  
0.95  
9.6  
A
ID  
A
IDM()  
Ptot  
A
Total Dissipation at Tc = 25 oC  
35  
W
W/oC  
V
oC  
oC  
Derating Factor  
0.72  
0.28  
2000  
VISO  
Tstg  
Tj  
Insulation Withstand Voltage (DC)  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
December 1996  

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