IRFBE20, SiHFBE20
Vishay Siliconix
Power MOSFET
FEATURES
• Dynamic dV/dt Rating
PRODUCT SUMMARY
VDS (V)
800
Available
• Repetitive Avalanche Rated
R
DS(on) (Ω)
VGS = 10 V
6.5
RoHS*
• Fast Switching
Qg (Max.) (nC)
38
5.0
COMPLIANT
• Ease of Paralleling
Q
Q
gs (nC)
gd (nC)
21
• Simple Drive Requirements
• Lead (Pb)-free Available
Configuration
Single
D
DESCRIPTION
TO-220
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
G
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
S
D
S
N-Channel MOSFET
G
ORDERING INFORMATION
Package
TO-220
IRFBE20PbF
SiHFBE20-E3
IRFBE20
Lead (Pb)-free
SnPb
SiHFBE20
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
LIMIT
800
UNIT
Drain-Source Voltage
Gate-Source Voltage
VDS
V
VGS
20
TC = 25 °C
TC =100°C
1.8
Continuous Drain Current
V
GS at 10 V
ID
1.2
A
Pulsed Drain Currenta
IDM
7.2
Linear Derating Factor
0.43
180
W/°C
mJ
A
Single Pulse Avalanche Energyb
Repetitive Avalanche Currenta
Repetitive Avalanche Energya
EAS
IAR
1.8
EAR
5.4
mJ
W
Maximum Power Dissipation
TC = 25 °C
PD
54
Peak Diode Recovery dV/dtc
dV/dt
TJ, Tstg
2.0
V/ns
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
- 55 to + 150
300d
10
°C
for 10 s
lbf · in
N · m
Mounting Torque
6-32 or M3 screw
1.1
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 104 mH, RG = 25 Ω, IAS = 1.8 A (see fig. 12).
c. ISD ≤ 1.8 A, dI/dt ≤ 80 A/µs, VDD ≤ 600, TJ ≤ 150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91117
S-81262-Rev. A, 07-Jul-08
www.vishay.com
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