是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | TO-220AB |
包装说明: | LEAD FREE PACKAGE-3 | 针数: | 3 |
Reach Compliance Code: | not_compliant | Factory Lead Time: | 6 weeks |
风险等级: | 0.7 | Is Samacsys: | N |
其他特性: | AVALANCHE RATED | 雪崩能效等级(Eas): | 260 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 800 V | 最大漏极电流 (Abs) (ID): | 4.1 A |
最大漏极电流 (ID): | 4.1 A | 最大漏源导通电阻: | 3 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-220AB |
JESD-30 代码: | R-PSFM-T3 | JESD-609代码: | e3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT APPLICABLE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 125 W |
最大脉冲漏极电流 (IDM): | 16 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Powers | 表面贴装: | NO |
端子面层: | Matte Tin (Sn) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT APPLICABLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IRFBE30 | VISHAY |
完全替代 ![]() |
Power MOSFET |
![]() |
BUZ81 | INFINEON |
功能相似 ![]() |
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated) |
![]() |
BUK456-800A | NXP |
功能相似 ![]() |
PowerMOS transistor |
![]() |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFBE30S | VISHAY |
获取价格 |
Power MOSFET |
![]() |
IRFBE30S | INFINEON |
获取价格 |
HEXFET㈢ Power MOSFET |
![]() |
IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L | VISHAY |
获取价格 |
Power MOSFET |
![]() |
IRFBE30S_V01 | VISHAY |
获取价格 |
Power MOSFET |
![]() |
IRFBE30SPBF | INFINEON |
获取价格 |
HEXFET Power MOSFET |
![]() |
IRFBE30SPBF | VISHAY |
获取价格 |
Power MOSFET |
![]() |
IRFBE30STRLPBF | VISHAY |
获取价格 |
Power MOSFET |
![]() |
IRFBE30STRLPBFA | VISHAY |
获取价格 |
Power MOSFET |
![]() |
IRFBE30STRR | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal |
![]() |
IRFBE30STRRPBF | VISHAY |
获取价格 |
Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal |
![]() |