IRFBF20L

更新时间： 2024-11-05 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	941K
描述
Power MOSFET

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中文翻译

获取价格

数据手册
替代型号

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IRFBF20L 数据手册

IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L

Vishay Siliconix

Power MOSFET

FEATURES

• Surface Mount (IRFBF20S/SiHFBF20S)

PRODUCT SUMMARY

V_DS(V)

900

Available

• Low-Profile Through-Hole (IRFBF20L/SiHFBF20L)

R_DS(on)(Ω)

V_GS= 10 V

8.0

RoHS*

Reel

COMPLIANT

• Available

Tape

and

Q_g(Max.) (nC)

4.7

(IRFBF20S/SiHFBF20S)

• Dynamic dV/dt Rating

• 150 °C Operating Temperature

• Fast Switching

_gs(nC)

_gd(nC)

Configuration

Single

• Fully Avalanche Rated

• Lead (Pb)-free Available

D²PAK (TO-263)

I²PAK (TO-262)

DESCRIPTION

Third generation Power MOSFETs form Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The D²PAK is a surface mount power package capabel of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface mount package. The

D²PAK is suitable for high current applications because of its

low internal connection resistance and can dissipate up to

N-Channel MOSFET

2.0

W in a typical surface mount application. The

through-hole version (IRFBF20L/SiHFBF20L) is available for

low-profile applications.

ORDERING INFORMATION

Package

D²PAK (TO-263)

IRFBF20SPbF

SiHFBF20S-E3

IRFBF20S

D²PAK (TO-263)

IRFBF20STRLPbF^a

SiHFBF20STL-E3^a

IRFBF20STRL^a

D²PAK (TO-263)

IRFBF20STRRPbF^a

SiHFBF20STR-E3^a

IRFBF20STRR^a

SiHFBF20STR^a

I²PAK (TO-262)

IRFBF20LPbF

SiHFBF20L-E3

IRFBF20L

Lead (Pb)-free

SnPb

SiHFBF20S-E3

SiHFBF20STL^a

SiHFBF20L

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage^e

Gate-Source Voltage^e

V_DS

900

V_GS

_C= 25 °C

1.7

1.1

6.8

0.43

180

1.7

5.4

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

Pulsed Drain Current^a,e

I_DM

Linear Derating Factor

W/°C

Single Pulse Avalanche Energy^{b, e}

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

_C= 25 °C

Maximum Power Dissipation

Peak Diode Recovery dV/dt^{c, e}

P_D

T_A= 25 °C

3.1

1.5

dV/dt

V/ns

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91121

S-Pending-Rev. A, 23-Jun-08

www.vishay.com

WORK-IN-PROGRESS

12 3 4 5 6 7 8

中文翻译

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IRFBF20L 替代型号

型号	品牌	替代类型	描述	数据表
IRFBF20LPBF	VISHAY	完全替代	Power MOSFET
FQI2N90	FAIRCHILD	功能相似	900V N-Channel MOSFET

与IRFBF20L相关器件

型号	品牌	获取价格	描述	数据表
IRFBF20LPBF	VISHAY	获取价格	Power MOSFET
IRFBF20LPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFBF20PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFBF20PBF	VISHAY	获取价格	Power MOSFET
IRFBF20S	VISHAY	获取价格	Power MOSFET
IRFBF20S	INFINEON	获取价格	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L	VISHAY	获取价格	Power MOSFET
IRFBF20SLPBF	VISHAY	获取价格	暂无描述
IRFBF20SPBF	VISHAY	获取价格	Power MOSFET
IRFBF20SPBF	INFINEON	获取价格	HEXFET Power MOSFET

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