是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | compliant | 风险等级: | 5.65 |
外壳连接: | DRAIN | 配置: | SINGLE |
最小漏源击穿电压: | 900 V | 最大漏极电流 (ID): | 3.6 A |
最大漏源导通电阻: | 3.7 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFBF32 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 2.5A I(D) | TO-220AB | |
IRFBF32-006PBF | INFINEON |
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Power Field-Effect Transistor, 2.5A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Met | |
IRFBF32-013 | INFINEON |
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Power Field-Effect Transistor, 2.5A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Met | |
IRFBG20 | INFINEON |
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Power MOSFET(Vdss=1000V, Rds(on)=11ohm, Id=1.4A) | |
IRFBG20 | VISHAY |
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Power MOSFET | |
IRFBG20PBF | INFINEON |
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HEXFET㈢ Power MOSFET | |
IRFBG20PBF | VISHAY |
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Power MOSFET | |
IRFBG20STRR | VISHAY |
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Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Met | |
IRFBG20STRRPBF | VISHAY |
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Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Met | |
IRFBG22 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 1.2A I(D) | TO-220AB |