Datasheet > IRFBL18N50K

IRFBL18N50K

更新时间： 2024-11-01 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	32K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 18A I(D) \| TO-263AB

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFBL18N50K 数据手册

PD- 93928

PROVISIONAL

IRFBL18N50K

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l Telecom and Data-Com off-Line SMPS

V_DSS

R_DS(on)

I_D

l UninterruptIble Power Supply

Benefits

l Low On-Resistance

500V

0.25Ω

18A

l High Speed Switching

l Low Gate Drive Current Due to Improved

Gate Charge Characteristics

l Improved Avalanche Ruggedness and

Dynamic dv/dt, Fully Characterized

Avalanche Voltage and Current

Super D²pak^TM

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.6

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

260

°C

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

(Body Diode)

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.5

––– 540 –––

––– 5.0 –––

T_J= 25°C, I_S= 18A, V_GS= 0V

T_J= 125°C, I_F= 18A

Q_rr

t_on

µC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Typical SMPS Topologies

Hard Switching Full and Half Bridge Circuits

Hard Switching Single Transistor Circuits

Power Factor Correction Circuits

www.irf.com

6/2/00

12 3

中文翻译

下载PDF

与IRFBL18N50K相关器件

型号	品牌	获取价格	描述	数据表
IRFBL3703	INFINEON	获取价格	Synchronous Rectification in High Power High Frequency DC/DC Converters
IRFC014	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem
IRFC014R	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFC024	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem
IRFC024PBF	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Sem
IRFC024R	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
IRFC034	INFINEON	获取价格	Power Field-Effect Transistor, 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRFC034R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| CHIP
IRFC044	ETC	获取价格
IRFC044R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| CHIP