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IRFBG30 PDF预览

IRFBG30

更新时间: 2024-11-05 12:05:11
品牌 Logo 应用领域
科盛美 - KERSEMI /
页数 文件大小 规格书
7页 4038K
描述
Power MOSFET

IRFBG30 数据手册

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IRFBG30, SiHFBG30  
Power MOSFET  
FEATURES  
• Dynamic dV/dt Rating  
PRODUCT SUMMARY  
VDS (V)  
1000  
Available  
• Repetitive Avalanche Rated  
RDS(on) (Ω)  
VGS = 10 V  
5.0  
RoHS*  
• Fast Switching  
Qg (Max.) (nC)  
80  
10  
COMPLIANT  
• Ease of Paralleling  
Q
Q
gs (nC)  
gd (nC)  
42  
• Simple Drive Requirements  
• Lead (Pb)-free Available  
Configuration  
Single  
D
DESCRIPTION  
TO-220  
Third generation Power MOSFETs from Vishay provide the  
designer with the best combination of fast switching,  
ruggedized device design, low on-resistance and  
cost-effectiveness.  
G
The TO-220 package is universally preferred for all  
commercial-industrial applications at power dissipation  
levels to approximately 50 W. The low thermal resistance  
and low package cost of the TO-220 contribute to its wide  
acceptance throughout the industry.  
S
D
S
N-Channel MOSFET  
G
ORDERING INFORMATION  
Package  
TO-220  
IRFBG30PbF  
SiHFBG30-E3  
IRFBG30  
Lead (Pb)-free  
SnPb  
SiHFBG30  
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted  
PARAMETER  
SYMBOL  
LIMIT  
1000  
20  
UNIT  
Drain-Source Voltage  
Gate-Source Voltage  
VDS  
V
VGS  
TC = 25 °C  
TC =100°C  
3.1  
Continuous Drain Current  
VGS at 10 V  
ID  
2.0  
A
Pulsed Drain Currenta  
IDM  
12  
Linear Derating Factor  
1.0  
W/°C  
mJ  
A
Single Pulse Avalanche Energyb  
Repetitive Avalanche Currenta  
Repetitive Avalanche Energya  
EAS  
IAR  
280  
3.1  
EAR  
13  
mJ  
W
Maximum Power Dissipation  
TC = 25 °C  
PD  
125  
Peak Diode Recovery dV/dtc  
dV/dt  
TJ, Tstg  
1.0  
V/ns  
Operating Junction and Storage Temperature Range  
Soldering Recommendations (Peak Temperature)  
- 55 to + 150  
300d  
10  
°C  
for 10 s  
lbf · in  
N · m  
Mounting Torque  
6-32 or M3 screw  
1.1  
Notes  
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).  
b. VDD = 50 V, starting TJ = 25 °C, L = 55 mH, RG = 25 Ω, IAS = 3.1 A (see fig. 12).  
c. ISD 3.1 A, dI/dt 80 A/µs, VDD 600, TJ 150 °C.  
d. 1.6 mm from case.  
www.kersemi.com  
1

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