Datasheet > IRFC11N50AB

IRFC11N50AB

更新时间： 2024-11-06 14:42:51

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	69K
描述
Power Field-Effect Transistor, 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 0.165 X 0.248 INCH, DIE-3

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IRFC11N50AB 技术参数

生命周期：	Active	零件包装代码：	DIE
包装说明：	UNCASED CHIP, R-XUUC-N2	针数：	3
Reach Compliance Code：	unknown	Factory Lead Time：	9 weeks
风险等级：	5.76	Is Samacsys：	N
配置：	SINGLE WITH BUILT-IN DIODE	最小漏源击穿电压：	500 V
最大漏源导通电阻：	0.52 Ω	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-XUUC-N2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	UNSPECIFIED
封装形状：	RECTANGULAR	封装形式：	UNCASED CHIP
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	YES	端子形式：	NO LEAD
端子位置：	UPPER	晶体管元件材料：	SILICON
Base Number Matches：	1

IRFC11N50AB 数据手册

PD - 94737

IRFC11N50AB

HEXFET^®Power MOSFET Die in Wafer Form

^l100% Tested at Probe

l Available in Chip Pack, Unsawn Wafer

Sawn on Film

500V

R_DS(on)= 0.52Ω

(max.)

5" Wafer

l Ultra Low On-Resistance

Key Electrical Characteristics (Packaged Part)

Parameter

V_(BR)DSS

R_DS(on)

V_GS(th)

I_DSS

Description

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Min.

500V

–––

2.0V

–––

Typ.

–––

Max. Test Conditions

V_GS= 0V, I_D= 250µA

V_GS= 10V, I_D= 6.6A

–––

0.52Ω

4.0V

V_DS= V_GS, I_D= 250µA

V_DS= 500V, V_GS=0V, T_J=25°C

V_GS= ±30V

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

Operating Junction and

25µA

I_GSS

±100nA

T_J

-55°C to 150°C Max.

T_STG

Storage Temperature Range

Mechanical Data

Nominal Backmetal Composition, (Thickness)

Nominal Front Metal Composition, (Thickness)

Dimensions

Cr- Ni - Ag, (1kA°-2kA°-2.5kA°)

Al with 1% Si (3.0µm)

0.165" x 0.248"

Wafer Diameter

125 mm, with 100 flat

425 µm

Wafer Thickness, Tolerance

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5342

0.084 mm

Reject Ink Dot Size

0.51 mm diameter minimum

Recommended Storage Environment

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300°C

IRFB11N50A

Recommended Die Attach Conditions

Referenced Package Part:

Die Outline

Note:

The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufac-

tured using IR’s established processes. Programs for customer-specified testing are available upon request. IR

has experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may

vary. Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending

on a number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to

standard package products and are therefore offered with a limited warranty as described in IR’s applicable

standard terms and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions

of sale, which are available upon request.

Part number shown is for die in waferform. Contact factory for these other options.

07/18/03

Document Number: 90422

www.vishay.com

12 3

中文翻译

下载PDF

与IRFC11N50AB相关器件

型号	品牌	获取价格	描述	数据表
IRFC120	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRFC120	MICROSEMI	获取价格	Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal
IRFC120PBF	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRFC120R	INFINEON	获取价格	Small Signal Field-Effect Transistor, 100V, 1-Element, N-Channel, Silicon, Metal-oxide Sem
IRFC130	MICROSEMI	获取价格	Power Field-Effect Transistor, 11A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
IRFC130	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRFC130PBF	INFINEON	获取价格	Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IRFC130R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| CHIP
IRFC140	INFINEON	获取价格	TRANSISTOR 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
IRFC1404	ETC	获取价格

与IRFC11N50AB相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

14
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

12
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

36
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

33

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFC11N50AB

IRFC11N50AB 技术参数

IRFC11N50AB 数据手册

与IRFC11N50AB相关器件

与IRFC11N50AB相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFC11N50AB

IRFC11N50AB 技术参数

IRFC11N50AB 数据手册

与IRFC11N50AB相关器件

与IRFC11N50AB相关文章

您还可以找

您在本页遇到什么问题？