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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| IRFC234 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
|
| IRFC234R | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
|
| IRFC240 | INFINEON |
获取价格 |
HEXFET Power MOSFET Die in Wafer Form |
|
| IRFC240 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 16A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Met |
|
| IRFC240PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide S |
|
| IRFC240R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | CHIP |
|
| IRFC244R | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |
|
| IRFC250 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 200V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide |
|
| IRFC250 | IXYS |
获取价格 |
High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series |
|
| IRFC250 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 27.4A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Me |
|
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