Datasheet > IRFC2907

IRFC2907

更新时间： 2024-11-01 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
1页	40K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| CHIP

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IRFC2907 数据手册

PD - 93777B

IRFC2907

HEXFET^®Power MOSFET Die in Wafer Form

75V

R_DS(on)=0.0033Ω

6" Wafer

Electrical Characteristics (Wafer Form)

Parameter

V_(BR)DSS

R_DS(on)

V_GS(th)

I_DSS

Description

Guaranteed (Min/Max)

Test Conditions

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

75V Min.

3.3mΩ Max.

V_GS= 0V, I_D= 250µA

V_GS= 10V, I_D= 45A

V_DS= V_GS, I_D= 250µA

V_DS= 75V, V_GS= 0V, T_J= 25°C

V_GS= ±20V

2.0V Min., 4.0V Max.

20µA Max.

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

Operating Junction and

I_GSS

± 200nA Max.

T_J

-55°C to 175°C Max.

T_STG

Storage Temperature Range

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )

100% Al (0.008 mm)

.257" x .360" [ 6.53 mm x 9.14 mm ]

150 mm, with 100 flat

Wafer Diameter:

Wafer Thickness:

0.375 mm ± 0.015 mm

Relevant Die Mechanical Drawing Number

Minimum Street Width

01-5383

0.107 mm

Reject Ink Dot Size

0.51 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

Recommended Storage Environment:

Recommended Die Attach Conditions:

Die Outline

www.irf.com

11/18/99

中文翻译

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