Datasheet > IRFC264NB

IRFC264NB

更新时间： 2024-11-02 19:41:59

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
2页	84K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

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IRFC264NB 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.84	配置：	Single
FET 技术：	METAL-OXIDE SEMICONDUCTOR	工作模式：	ENHANCEMENT MODE
最高工作温度：	175 °C	极性/信道类型：	N-CHANNEL
子类别：	FET General Purpose Power	Base Number Matches：	1

IRFC264NB 数据手册

PD - 95820

IRFC264NB

HEXFET^®Power MOSFET Die in Wafer Form

^l100% Tested at Probe

l Available in Tape and Reel (upon request),

Chip Pack, and Sawn on Film

250V

R_DS(on)= 60mΩ

(max.)

6" Wafer

Electrical Characteristics

Parameter

V_(BR)DSS

R_DS(on)

V_GS(th)

I_DSS

Description

Min

250V

–––

Typ.

–––

Max

Test Conditions

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

–––

V_GS= 0V, I_D= 250µA

60mΩ V_GS= 10V, I_D= 25A

4.0V

2.0V

–––

V_DS= V_GS, I_D= 250µA

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

Operating Junction and

25µA

V_DS= 250V, V_GS= 0V, T_J= 25°C

I_GSS

–––

± 100nA V_GS= ±20V

T_J

-55°C to 175°C Max.

T_STG

Storage Temperature Range

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag ( 1kA°-2kA°-5kA° )

Al-1%Si (0.004mm)

0.181" x 0.303"

Wafer Diameter:

150 mm, with 100 flat

254 µm

Wafer Thickness:

Relevant Die Mechanical Drawing Number

Minimum Street Width

01-5529

107 µm

Reject Ink Dot Size

0.51 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

IRFP264N

Recommended Storage Environment:

Recommended Die Attach Conditions:

Reference Packaged Part

Die Outline

Note:

The above data sheet is based on IR sample testing under certain predetermined and assumed conditions, and is

provided for illustration purposes only. Customers are encouraged to perform testing in actual proposed packaged

and use conditions. IR die products are tested using IR-based quality assurance procedures and are manufactured

using IR’s established processes. Programs for customer-specified testing are available upon request. IR has

experienced assembly yields of generally 95% or greater for individual die; however, customer’s results may vary.

Estimates such as those described and set forth in this data sheet for semiconductor die will vary depending on a

number of packaging, handling, use and other factors. Sold die may not perform on an equivalent basis to standard

package products and are therefore offered with a limited warranty as described in IR’s applicable standard terms

and conditions of sale. All IR die sales are subject to IR’s applicable standard terms and conditions of sale, which

are available upon request.

Part number shown is for die in waveform. Contact factory for these other options.

www.irf.com

12/12/03

中文翻译

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与IRFC264NB相关器件

型号	品牌	获取价格	描述	数据表
IRFC264PBF	INFINEON	获取价格	Power Field-Effect Transistor, 250V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide
IRFC2907	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 75V V(BR)DSS \| CHIP
IRFC2907B	INFINEON	获取价格	HEXFET Power MOSFET Die in Wafer Form
IRFC310	MICROSEMI	获取价格	Power Field-Effect Transistor, 1.25A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Me
IRFC310	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Se
IRFC310R	INFINEON	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
IRFC320R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| CHIP
IRFC330	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semi
IRFC330R	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| CHIP
IRFC340	INFINEON	获取价格	Power Field-Effect Transistor, 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide S

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