IRFC240PBF

更新时间： 2024-11-06 13:08:47

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管
页数	文件大小	规格书
1页	28K
描述
Power Field-Effect Transistor, 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 5 INCH WAFER

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IRFC240PBF 数据手册

PD- 91873

IRFC240

HEXFET^®Power MOSFET Die in Wafer Form

200 V

Size 4.0

Rds(on)=0.18Ω

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_(BR)DSS

R_DS(on)

V_GS(th)

I_DSS

Description

Guaranteed (Min/Max)

Test Conditions

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

200V Min.

0.180Ω Max.

2.3V Min., 4.0V Max.

25µA Max.

V_GS= 0V, I_D= 100µA

V_GS= 10V, I_D= 10A

V_DS= V_GS, I_D= 250µA

V_DS= 200V, V_GS= 0V, T_J= 25°C

V_GS= ±20V

Drain-to-Source Leakage Current

Gate-to-Source Leakage

I_GSS

± 10µA Max.

T_J

Operating Junction and

125°C Max.

T_STG

Storage Temperature Range

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )

99% Al, 1% Si (0.004 mm)

0.147" x 0.201" ( 3.73mm x 5.11 mm)

125mm with 100 flat

Wafer Diameter:

Wafer thickness:

0.375mm + / -0.020mm

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5331

0.084 mm

Reject Ink Dot Size

0.51mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : IRF640

Die Outline

3/23/99

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