Datasheet > IRFC1404

IRFC1404

更新时间： 2024-09-15 23:58:51

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IRFC1404 数据手册

PD - 93776

IRFC1404

HEXFET^®Power MOSFET Die in Wafer Form

40V

Size 4.0

R_DS(on)=0.0029Ω

6" Wafer

Electrical Characteristics (Wafer Form)

Parameter

V_(BR)DSS

R_DS(on)

V_GS(th)

I_DSS

Description

Guaranteed (Min/Max)

Test Conditions

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

40V Min.

2.9mΩ Max.

V_GS= 0V, I_D= 250µA

V_GS= 10V, I_D= 45A

V_DS= V_GS, I_D= 250µA

V_DS= 40V, V_GS= 0V, T_J= 25°C

V_GS= ±20V

2.0V Min., 4.0V Max.

25µA Max.

Drain-to-Source Leakage Current

Gate-to-Source Leakage Current

Operating Junction and

I_GSS

± 200nA Max.

T_J

-55°C to 175°C Max.

T_STG

Storage Temperature Range

Mechanical Data

Nominal Back Metal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )

100% Al (0.008 mm)

.170" x .230" [ 4.32 mm x 5.84 mm ]

150 mm, with 100 flat

Wafer Diameter:

Wafer Thickness:

0.356 mm ± 0.025 mm

Relevant Die Mechanical Drawing Number

Minimum Street Width

01-5384

0.109 mm

Reject Ink Dot Size

0.51 mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300 °C

Recommended Storage Environment:

Recommended Die Attach Conditions:

Die Outline

www.irf.com

10/12/99

中文翻译

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