是否无铅: | 含铅 | 生命周期: | Obsolete |
零件包装代码: | DIE | 包装说明: | UNCASED CHIP, X-XUUC-N |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.39 | 配置: | SINGLE |
最小漏源击穿电压: | 100 V | 最大漏极电流 (ID): | 6 A |
最大漏源导通电阻: | 0.3 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | X-XUUC-N | JESD-609代码: | e0 |
元件数量: | 1 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | UNSPECIFIED | 封装形状: | UNSPECIFIED |
封装形式: | UNCASED CHIP | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | TIN LEAD |
端子形式: | NO LEAD | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFC120PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRFC120R | INFINEON |
获取价格 |
Small Signal Field-Effect Transistor, 100V, 1-Element, N-Channel, Silicon, Metal-oxide Sem | |
IRFC130 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met | |
IRFC130 | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRFC130PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide S | |
IRFC130R | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | CHIP | |
IRFC140 | INFINEON |
获取价格 |
TRANSISTOR 100 V, 0.077 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | |
IRFC1404 | ETC |
获取价格 |
||
IRFC140PBF | INFINEON |
获取价格 |
Power Field-Effect Transistor, 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide | |
IRFC140R | INFINEON |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |