Datasheet > IRFC044

IRFC044

更新时间： 2024-09-14 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关
页数	文件大小	规格书
1页	36K
描述

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中文翻译

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数据手册

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IRFC044 数据手册

PD- 91874

IRFC044

HEXFET^®Power MOSFET Die in Wafer Form

60 V

Size 4.0

Rds(on)=0.034Ω

5" Wafer

Electrical Characteristics ( Wafer Form )

Parameter

V_(BR)DSS

R_DS(on)

V_GS(th)

I_DSS

Description

Guaranteed (Min/Max)

Test Conditions

Drain-to-Source Breakdown Voltage

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

60V Min.

0.034Ω Max.

2.1V Min.

V_GS= 0V, I_D= 100µA

V_GS= 10V, I_D= 5.0A

V_DS= 5.0V, I_D= 250µA

V_DS= 60V, V_GS= 0V, T_J= 25°C

V_GS= ±20V

Drain-to-Source Leakage Current

Gate-to-Source Leakage

100µA Max.

± 10µA Max.

125°C Max.

I_GSS

T_J

Operating Junction and

T_STG

Storage Temperature Range

Mechanical Data

Nominal Backmetal Composition, Thickness:

Nominal Front Metal Composition, Thickness:

Dimensions:

Cr-NiV-Ag ( 1kA°-2kA°-2.5kA° )

99% Al, 1% Si (0.004mm)

0.170" x 0.180" ( 4.32mm x 4.57 mm)

125mm with 100 flat

Wafer Diameter:

Wafer thickness:

0.375mm + / -0.020mm

Relevant Die Mechanical Dwg. Number

Minimum Street Width

01-5018

0.084 mm

Reject Ink Dot Size

0.51mm Diameter Minimum

Store in original container, in dessicated

nitrogen, with no contamination

For optimum electrical results, die attach

temperature should not exceed 300C

Recommended Storage Environment:

Recommended Die Attach Conditions

Reference Standard IR packaged part ( for design ) : IRFZ44

Die Outline

3/23/99

中文翻译

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