Datasheet > IRFBL17N50L

IRFBL17N50L

更新时间： 2024-09-14 23:58:51

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
3页	32K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 17A I(D) \| TO-263AB

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中文翻译

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数据手册

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IRFBL17N50L 数据手册

PD- 93929

PROVISIONAL

IRFBL17N50L

SMPS MOSFET

HEXFET^®Power MOSFET

Applications

l Telecom and Data-Com off-Line SMPS

V_DSS

R_DS(on)

I_D

l Motor Control

500V

0.28Ω

17A

l UninterruptIble Power Supply

Benefits

l Low On-Resistance

l High Speed Switching

l Low Gate Drive Current Due to Improved

Gate Charge Characteristics

l Built in Fast Recovery Diode

l Improved Avalanche Ruggedness and

Dynamic dv/dt, Fully Characterized

Avalanche Voltage and Current

Super D²pak^TM

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

P_D@T_C= 25°C

Power Dissipation

200

W/°C

Linear Derating Factor

1.6

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

(1.6mm from case )

260

°C

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

Continuous Source Current

(Body Diode)

––– –––

showing the

I_SM

Pulsed Source Current

(Body Diode)

integral reverse

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

Reverse Recovery Time

Reverse RecoveryCharge

Forward Turn-On Time

––– ––– 1.5

––– 180 –––

––– 420 –––

T_J= 25°C, I_S= 17A, V_GS= 0V

T_J= 125°C, I_F= 17A

Q_rr

t_on

nC di/dt = 100A/µs

Intrinsic turn-on time is negligible (turn-on is dominated by L_S+L_D)

Typical SMPS Topologies

Zero Voltage Switching Full and Half Bridge Circuits

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