Datasheet > IRFBL10N60A

IRFBL10N60A

更新时间： 2024-11-02 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		/
页数	文件大小	规格书
8页	117K
描述
HEXFET Power MOSFET

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中文翻译

获取价格

数据手册

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IRFBL10N60A 数据手册

PD-91819C

SMPS MOSFET

IRFBL10N60A

HEXFET^®Power MOSFET

Applications

V_DSS

600V

Rds(on) max

I_D

11A

l Switch Mode Power Supply ( SMPS )

l Uninterruptable Power Supply

l High Speed Power Switching

0.61Ω

Benefits

l Low Gate Charge Qg results in simple

Drive Requirement

l Improved Gate, Avalanche and Dynamic

dv/dt Ruggedness

l Fully Characterized Capacitance and

Avalanche Voltage and Current

Super-D²Pak^TM

Absolute Maximum Ratings

Parameter

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

7.0

P_D@T_C= 25°C

Power Dissipation

180

W/°C

Linear Derating Factor

1.4

V_GS

dv/dt

T_J

Gate-to-Source Voltage

± 30

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 150

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

300 (1.6mm from case )

Applicable Off Line SMPS Topologies:

l Active Clamped Forward

l Main Switch

Notes through ꢀ are on page 8

www.irf.com

2/16/00

12 3 4 5 6 7 8

中文翻译

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