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IRFBL12N50A PDF预览

IRFBL12N50A

更新时间: 2024-09-15 04:23:19
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
8页 123K
描述
HEXFET㈢ Power MOSFET

IRFBL12N50A 数据手册

 浏览型号IRFBL12N50A的Datasheet PDF文件第2页浏览型号IRFBL12N50A的Datasheet PDF文件第3页浏览型号IRFBL12N50A的Datasheet PDF文件第4页浏览型号IRFBL12N50A的Datasheet PDF文件第5页浏览型号IRFBL12N50A的Datasheet PDF文件第6页浏览型号IRFBL12N50A的Datasheet PDF文件第7页 
PD - 91818A  
SMPS MOSFET  
IRFBL12N50A  
HEXFET® Power MOSFET  
Applications  
VDSS  
500V  
RDS(on) max  
ID  
13A  
l Switch Mode Power Supply (SMPS)  
l Uninterruptible Power Supply  
l High Speed Power Switching  
0.45Ω  
Benefits  
l Low Gate Charge Qg Results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
Super-D2PakTM  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
ID @ TC = 100°C  
IDM  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
13  
8.2  
A
52  
PD @TC = 25°C  
Power Dissipation  
180  
W
W/°C  
V
Linear Derating Factor  
1.4  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
3.1  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
°C  
300 (1.6mm from case )  
Typical SMPS Topologies  
l Active Clamped Forward  
l Main Switch  
Notes  through are on page 8  
www.irf.com  
1
2/16/00  

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