型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IRFBG30-001PBF | INFINEON |
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Power Field-Effect Transistor, 2.3A I(D), 1000V, 5.6ohm, 1-Element, N-Channel, Silicon, Me | |
IRFBG30PBF | VISHAY |
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Power MOSFET | |
IRFBG32 | INFINEON |
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Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Me | |
IRFBG32-004PBF | INFINEON |
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Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Me | |
IRFBG32-005PBF | INFINEON |
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Power Field-Effect Transistor, 2.1A I(D), 1000V, 6.7ohm, 1-Element, N-Channel, Silicon, Me | |
IRFBL10N60A | INFINEON |
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HEXFET Power MOSFET | |
IRFBL12N50A | INFINEON |
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HEXFET㈢ Power MOSFET | |
IRFBL17N50L | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 17A I(D) | TO-263AB | |
IRFBL17N50LPBF | INFINEON |
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Power Field-Effect Transistor, 17A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Met | |
IRFBL18N50K | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 18A I(D) | TO-263AB |