IRFBG20

更新时间： 2024-11-05 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	1090K
描述
Power MOSFET

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中文翻译

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数据手册
替代型号

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IRFBG20 数据手册

IRFBG20, SiHFBG20

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

PRODUCT SUMMARY

V_DS(V)

1000

Available

_DS(on)(Ω)

V_GS= 10 V

RoHS*

• Fast Switching

Q_g(Max.) (nC)

4.9

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

TO-220

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effictiveness.

The TO-220 package is universially preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRFBG20PbF

SiHFBG20-E3

IRFBG20

Lead (Pb)-free

SnPb

SiHFBG20

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

1000

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

T_C= 25 °C

T_C=100°C

1.4

Continuous Drain Current

V_GSat 10 V

I_D

0.86

5.6

Pulsed Drain Current^a

I_DM

Linear Derating Factor

0.43

200

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

1.4

E_AR

5.4

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

1.0

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 193 µH, R_G= 25 Ω, I_AS= 1.4 A (see fig. 12).

c. I_SD≤ 1.4 A, dI/dt ≤ 60 A/µs, V_DD≤ 600, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91123

S-81262-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFBG20 替代型号

型号	品牌	替代类型	描述	数据表
IRFBG20PBF	VISHAY	完全替代	Power MOSFET

与IRFBG20相关器件

型号	品牌	获取价格	描述	数据表
IRFBG20PBF	INFINEON	获取价格	HEXFET㈢ Power MOSFET
IRFBG20PBF	VISHAY	获取价格	Power MOSFET
IRFBG20STRR	VISHAY	获取价格	Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Met
IRFBG20STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 1.4A I(D), 1000V, 11ohm, 1-Element, N-Channel, Silicon, Met
IRFBG22	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 1KV V(BR)DSS \| 1.2A I(D) \| TO-220AB
IRFBG22-011	INFINEON	获取价格	Power Field-Effect Transistor, 1.2A I(D), 1000V, 13.8ohm, 1-Element, N-Channel, Silicon, M
IRFBG30	INFINEON	获取价格	Power MOSFET(Vdss=1000V, Rds(on)=5.0ohm, Id=3.1A)
IRFBG30	VISHAY	获取价格	Power MOSFET
IRFBG30	KERSEMI	获取价格	Power MOSFET
IRFBG30-001PBF	INFINEON	获取价格	Power Field-Effect Transistor, 2.3A I(D), 1000V, 5.6ohm, 1-Element, N-Channel, Silicon, Me

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