IRFBF30L

更新时间： 2024-11-05 12:18:35

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
9页	1038K
描述
Power MOSFET

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中文翻译

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数据手册

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IRFBF30L 数据手册

IRFBF30, SiHFBF30

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

900

Available

• Repetitive Avalanche Rated

_DS(on)()

V_GS= 10 V

3.7

RoHS*

• Fast Switching

Q_g(Max.) (nC)

COMPLIANT

_gs(nC)

_gd(nC)

• Ease of Paralleling

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

Configuration

Single

DESCRIPTION

TO-220AB

Third generation MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universially preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220AB

IRFBF30PbF

SiHFBF30-E3

IRFBF30

Lead (Pb)-free

SnPb

SiHFBF30

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMITE

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

900

_C= 25 °C

3.6

Continuous Drain Current

V_GSat 10 V

I_D

_C= 100 °C

2.3

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

250

3.6

E_AR

125

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

for 10 s

P_D

dV/dt

T_J, T_stg

1.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 36 mH, R_g= 25 , I_AS= 3.6 A (see fig. 12).

c. I_SD 3.6 A, dI/dt  70 A/μs, V_DD 600, T_J 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91122

S11-0516-Rev. B, 21-Mar-11

www.vishay.com

This datasheet is subject to change without notice.

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...9

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与IRFBF30L相关器件

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IRFBF30PBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFBF30PBF	VISHAY	获取价格	Power MOSFET
IRFBF30STRR	VISHAY	获取价格	Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Met
IRFBF32	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 2.5A I(D) \| TO-220AB
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