IRFBF20PBF

更新时间： 2024-11-23 05:39:27

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
8页	985K
描述
Power MOSFET

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中文翻译

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IRFBF20PBF 数据手册

IRFBF20, SiHFBF20

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

900

Available

• Repetitve Avalanche Rated

_DS(on)(Ω)

V_GS= 10 V

8.0

RoHS*

• Fast Switching

Q_g(Max.) (nC)

4.7

COMPLIANT

• Ease of Paralleling

_gs(nC)

_gd(nC)

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

TO-220

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

N-Channel MOSFET

ORDERING INFORMATION

Package

TO-220

IRFBF20PbF

SiHFBF20-E3

IRFBF20

Lead (Pb)-free

SnPb

SiHFBF20

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

900

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

1.7

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

1.1

Pulsed Drain Current^a

I_DM

6.8

Linear Derating Factor

0.43

180

W/°C

Single Pulse Avalanche Energy^b

Repetitive Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

1.7

E_AR

5.4

Maximum Power Dissipation

_C= 25 °C

P_D

Peak Diode Recovery dV/dt^c

dV/dt

T_J, T_stg

1.5

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 117 mH, R_G= 25 Ω, I_AS= 1.7 A (see fig. 12).

c. I_SD≤ 1.7 A, dI/dt ≤ 70 A/µs, V_DD≤ 600, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91120

S-81262-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

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IRFBF20PBF 替代型号

型号	品牌	替代类型	描述	数据表
IRFBF20	VISHAY	完全替代	Power MOSFET
SIHFBF20	VISHAY	功能相似	Power MOSFET
IRFBF20PBF	VISHAY	功能相似	Power MOSFET

与IRFBF20PBF相关器件

型号	品牌	获取价格	描述	数据表
IRFBF20S	VISHAY	获取价格	Power MOSFET
IRFBF20S	INFINEON	获取价格	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L	VISHAY	获取价格	Power MOSFET
IRFBF20SLPBF	VISHAY	获取价格	暂无描述
IRFBF20SPBF	VISHAY	获取价格	Power MOSFET
IRFBF20SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFBF20STRL	VISHAY	获取价格	Power MOSFET
IRFBF20STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBF20STRR	VISHAY	获取价格	Power MOSFET
IRFBF20STRRPBF	VISHAY	获取价格	Power MOSFET

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