Datasheet > IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

更新时间： 2024-11-24 14:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	307K
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Power MOSFET

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IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L 数据手册

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IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount (IRFBF20S, SiHFBF20S)

D²PAK (TO-263)

I²PAK (TO-262)

•

Low-profile through-hole (IRFBF20L, SiHFBF20L)

Available in tape and reel (IRFBF20S, SiHFBF20S)

Available

• Dynamic dV/dt rating

• 150 °C operating temperature

• Fast switching

• Fully avalanche rated

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

N-Channel MOSFET

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



DESCRIPTION

PRODUCT SUMMARY

Third generation power MOSFETs form Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

V_DS(V)

900

8.0

R_DS(on)()

V_GS= 10 V

Q_gmax. (nC)

The D²PAK is a surface-mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface-mount application. The

through-hole version (IRFBF20L, SiHFBF20L) is available for

low-profile applications.

_gs(nC)

_gd(nC)

4.7

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHFBF20STRL-GE3 ^a

IRFBF20STRLPbF ^a

D²PAK (TO-263)

SiHFBF20STRR-GE3 ^a

IRFBF20STRRPbF ^a

I²PAK (TO-262)

SiHFBF20L-GE3

IRFBF20LPbF

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SiHFBF20S-GE3

IRFBF20SPbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage ^e

Gate-source voltage ^e

SYMBOL

LIMIT

900

UNIT

V_DS

V_GS

_C= 25 °C

1.7

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

1.1

Pulsed drain current ^{a, e}

I_DM

6.8

Linear derating factor

0.43

180

1.7

W/°C

Single pulse avalanche energy ^{b, e}

Repetitive avalanche current ^a

Repetitive avalanche energy ^a

E_AS

I_AR

E_AR

5.4

_C= 25 °C

Maximum power dissipation

P_D

V/ns

°C

T_A= 25 °C

3.1

Peak diode recovery dV/dt ^{c, e}

dV/dt

1.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

Mounting torque

T_J, T_stg

-55 to +150

300

for 10 s

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V; starting T_J= 25 °C, L = 117 mH, R_g= 25 , I_AS= 1.7 A (see fig. 12)

c. I_SD 1.7 A, dI/dt  70 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. Uses IRFBF20, SiHFBF20 data and test conditions

S20-0238-Rev. C, 13-Apr-2020

Document Number: 91121

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L相关器件

型号	品牌	获取价格	描述	数据表
IRFBF20SLPBF	VISHAY	获取价格	暂无描述
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IRFBF20SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFBF20STRL	VISHAY	获取价格	Power MOSFET
IRFBF20STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBF20STRR	VISHAY	获取价格	Power MOSFET
IRFBF20STRRPBF	VISHAY	获取价格	Power MOSFET
IRFBF22	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 1.5A I(D) \| TO-220AB
IRFBF22-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.5A I(D), 900V, 9.6ohm, 1-Element, N-Channel, Silicon, Met
IRFBF22-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.5A I(D), 900V, 9.6ohm, 1-Element, N-Channel, Silicon, Met

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