Datasheet > IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

更新时间： 2024-09-14 14:53:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	307K
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Power MOSFET

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IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L 数据手册

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IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

• Surface-mount (IRFBF20S, SiHFBF20S)

D²PAK (TO-263)

I²PAK (TO-262)

•

Low-profile through-hole (IRFBF20L, SiHFBF20L)

Available in tape and reel (IRFBF20S, SiHFBF20S)

Available

• Dynamic dV/dt rating

• 150 °C operating temperature

• Fast switching

• Fully avalanche rated

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

N-Channel MOSFET

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



DESCRIPTION

PRODUCT SUMMARY

Third generation power MOSFETs form Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

V_DS(V)

900

8.0

R_DS(on)()

V_GS= 10 V

Q_gmax. (nC)

The D²PAK is a surface-mount power package capable of

the accommodating die sizes up to HEX-4. It provides the

highest power capability and the lowest possible

on-resistance in any existing surface-mount package. The

D²PAK is suitable for high current applications because of

its low internal connection resistance and can dissipate up

to 2.0 W in a typical surface-mount application. The

through-hole version (IRFBF20L, SiHFBF20L) is available for

low-profile applications.

_gs(nC)

_gd(nC)

4.7

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHFBF20STRL-GE3 ^a

IRFBF20STRLPbF ^a

D²PAK (TO-263)

SiHFBF20STRR-GE3 ^a

IRFBF20STRRPbF ^a

I²PAK (TO-262)

SiHFBF20L-GE3

IRFBF20LPbF

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

SiHFBF20S-GE3

IRFBF20SPbF

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

Drain-source voltage ^e

Gate-source voltage ^e

SYMBOL

LIMIT

900

UNIT

V_DS

V_GS

_C= 25 °C

1.7

Continuous drain current

V_GSat 10 V

I_D

T_C= 100 °C

1.1

Pulsed drain current ^{a, e}

I_DM

6.8

Linear derating factor

0.43

180

1.7

W/°C

Single pulse avalanche energy ^{b, e}

Repetitive avalanche current ^a

Repetitive avalanche energy ^a

E_AS

I_AR

E_AR

5.4

_C= 25 °C

Maximum power dissipation

P_D

V/ns

°C

T_A= 25 °C

3.1

Peak diode recovery dV/dt ^{c, e}

dV/dt

1.5

Operating junction and storage temperature range

Soldering recommendations (peak temperature) ^d

Mounting torque

T_J, T_stg

-55 to +150

300

for 10 s

6-32 or M3 screw

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V; starting T_J= 25 °C, L = 117 mH, R_g= 25 , I_AS= 1.7 A (see fig. 12)

c. I_SD 1.7 A, dI/dt  70 A/μs, V_DD V_DS, T_J 150 °C

d. 1.6 mm from case

e. Uses IRFBF20, SiHFBF20 data and test conditions

S20-0238-Rev. C, 13-Apr-2020

Document Number: 91121

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与IRFBF20S, SiHFBF20S, IRFBF20L, SiHFBF20L相关器件

型号	品牌	获取价格	描述	数据表
IRFBF20SLPBF	VISHAY	获取价格	暂无描述
IRFBF20SPBF	VISHAY	获取价格	Power MOSFET
IRFBF20SPBF	INFINEON	获取价格	HEXFET Power MOSFET
IRFBF20STRL	VISHAY	获取价格	Power MOSFET
IRFBF20STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBF20STRR	VISHAY	获取价格	Power MOSFET
IRFBF20STRRPBF	VISHAY	获取价格	Power MOSFET
IRFBF22	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 900V V(BR)DSS \| 1.5A I(D) \| TO-220AB
IRFBF22-003PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.5A I(D), 900V, 9.6ohm, 1-Element, N-Channel, Silicon, Met
IRFBF22-005PBF	INFINEON	获取价格	Power Field-Effect Transistor, 1.5A I(D), 900V, 9.6ohm, 1-Element, N-Channel, Silicon, Met

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