Datasheet > IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L

更新时间： 2024-09-14 14:54:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	511K
描述
Power MOSFET

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IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L 数据手册

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IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L

www.vishay.com

Vishay Siliconix

Power MOSFET

FEATURES

D²PAK (TO-26

I²PAK (TO-262)

• Dynamic dV/dt rating

• Repetitive avalanche rated

Available

• Fast switching

• Ease of paralleling

Available

• Simple drive requirements

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

N-Channel MOSFET

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details



PRODUCT SUMMARY

V_DS(V)



800

R_DS(on)()

V_GS= 10 V

3.0

DESCRIPTION

Q_gmax. (nC)

9.6

_gs(nC)

_gd(nC)

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

Configuration

Single

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHFBE30S-GE3

IRFBE30SPbF

D²PAK (TO-263)

SiHFBE30STRL-GE3 ^a

IRFBE30STRLPbF ^a

I²PAK (TO-262)

SiHFBE30L-GE3

IRFBE30LPbF

Lead (Pb)-free and Halogen-free

Lead (Pb)-free

Note

a. See device orientation

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

800

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

4.1

Continuous Drain Current

V_GSat 10 V

I_D

T_C= 100 °C

2.6

Pulsed Drain Current ^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy ^b

Avalanche Current ^a

E_AS

I_AR

260

4.1

Repetitive Avalanche Energy ^a

E_AR

Maximum Power Dissipation

_C= 25 °C

for 10 s

P_D

125

2.0

Peak Diode Recovery dV/dt ^c

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak temperature) ^d

dV/dt

T_J, T_stg

V/ns

-55 to +150

300

°C

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V_DD= 50 V, starting T_J= 25 °C, L = 29 mH, R_g= 25 , I_AS= 4.1 A (see fig. 12)

c. I_SD 4.1 A, dI/dt  100 A/μs, V_DD 600 V, T_J 150 °C

d. 1.6 mm from case

S21-0943-Rev. D, 20-Sep-2021

Document Number: 91119

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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