IRFBE30S

更新时间： 2024-11-23 04:23:19

品牌	Logo	应用领域
英飞凌 - INFINEON		晶体晶体管功率场效应晶体管开关脉冲局域网
页数	文件大小	规格书
6页	473K
描述
HEXFET㈢ Power MOSFET

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中文翻译

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数据手册

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IRFBE30S 数据手册

PD - 94694

IRFBE30S

IRFBE30L

HEXFET^®Power MOSFET

Dynamic dv/dt Rating

Repetitive Avalanche Rated

Fast Switching

Ease of Paralleling

Simple Drive Requirements

V_DSS= 800V

R_DS(on)= 3.0Ω

I_D= 4.1A

Description

Third Generation HEXFETs from International

Rectifier provide the designer with the best

combinationoffastswitching,ruggedizeddevice

design,lowon-resistanceandcost-effectiveness.

D²Pak

TO-262

IRFBE30S

IRFBE30L

Absolute Maximum Ratings

Parameter

Max.

4.1

Units

@ T_C= 25°C

@ T_C= 100°C

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

2.6

@T_C= 25°C

Maximum Power Dissipation

125

Linear Derating Factor

Gate-to-Source Voltage

1.0

W/°C

± 20

E_AS

I_AR

Single Pulse Avalanche Energy (Thermally Limited)

Avalanche Current

260

4.1

Repetitive Avalanche Energy

E_AR

Peak Diode Recovery dv/dt

Operating Junction and

dv/dt

2.0

V/ns

°C

-55 to + 150

Storage Temperature Range

STG

Soldering Temperature, for 10 seconds

Mounting torque, 6-32 or M3 screw

300 (1.6mm from case )

10 lbf•in (1.1N•m)

Thermal Resistance

Parameter

Min.

Typ.

–––

Max.

Units

R_θ

Junction-to-Case

–––

1.0

–––

°C/W

Case-to-Sink, Flat, Greased Surface

0.50

–––

Junction-to-Ambient

www.irf.com

06/11/03

12 3 4 5 6

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