IRFBE30SPBF

更新时间： 2024-02-21 07:07:31

品牌	Logo	应用领域
威世 - VISHAY		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
8页	1204K
描述
Power MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IRFBE30SPBF 数据手册

IRFBE30S, IRFBE30L, SiHFBE30S, SiHFBE30L

Vishay Siliconix

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

800

Available

• Repetitive Avalanche Rated

• Fast Switching

_DS(on)(Ω)

V_GS= 10 V

3.0

RoHS*

Q_g(Max.) (nC)

9.6

COMPLIANT

_gs(nC)

_gd(nC)

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

Configuration

Single

D²PAK

I²PAK

(TO-263)

(TO-262)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

I²PAK (TO-262)

IRFBE30SPbF

IRFBE30STRLPbF^a

SiHFBE30STL-E3^a

IRFBE30LPbF

Lead (Pb)-free

SiHFBE30S-E3

IRFBE30S

SiHFBE30L-E3

SnPb

SiHFBE30S

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS T_C= 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

800

V_GS

_C= 25 °C

4.1

Continuous Drain Current

V_GSat 10 V

I_D

T_C=100°C

2.6

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

W/°C

Single Pulse Avalanche Energy^b

Avalanche Current^a

E_AS

I_AR

260

4.1

Repetitive Avalanche Energy^a

E_AR

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

P_D

125

2.0

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

300^d

°C

for 10 s

6-32 or M3 screw

lbf · in

N · m

Mounting Torque

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 29 mH, R_G= 25 Ω, I_AS= 4.1 A (see fig. 12).

c. I_SD≤ 4.1 A, dI/dt ≤ 100 A/µs, V_DD≤ 600 V, T_J≤ 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91119

S-81432-Rev. A, 07-Jul-08

www.vishay.com

12 3 4 5 6 7 8

中文翻译

下载PDF

与IRFBE30SPBF相关器件

型号	品牌	获取价格	描述	数据表
IRFBE30STRLPBF	VISHAY	获取价格	Power MOSFET
IRFBE30STRLPBFA	VISHAY	获取价格	Power MOSFET
IRFBE30STRR	VISHAY	获取价格	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFBE30STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFBE32	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3.2A I(D) \| TO-220AB
IRFBF20	INFINEON	获取价格	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
IRFBF20	VISHAY	获取价格	Power MOSFET
IRFBF20-002	VISHAY	获取价格	Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal
IRFBF20-018PBF	VISHAY	获取价格	Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal
IRFBF20-030PBF	VISHAY	获取价格	Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal

与IRFBE30SPBF相关文章

SL74HC10N：高性能三输入与非门解析
2024-09-03

45
AIC1781A 电池充电控制器深度解析
2024-09-03

33
Pickering新高压舌簧继电器亮相汽车测试博览会
2024-08-26

73
采用MCU+MPU双处理器架构实现的创新应用设计探索
2024-08-23

80

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFBE30SPBF

IRFBE30SPBF 数据手册

与IRFBE30SPBF相关器件

与IRFBE30SPBF相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

IRFBE30SPBF

IRFBE30SPBF 数据手册

与IRFBE30SPBF相关器件

与IRFBE30SPBF相关文章

您还可以找

您在本页遇到什么问题？