Datasheet > IRFBE30STRLPBFA

IRFBE30STRLPBFA

更新时间： 2024-09-14 02:52:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
11页	511K
描述
Power MOSFET

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IRFBE30STRLPBFA 数据手册

IRFBE30S, SiHFBE30S, IRFBE30L, SiHFBE30L

Vishay Siliconix

Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Dynamic dV/dt Rating

PRODUCT SUMMARY

V_DS(V)

800

_DS(on)()

V_GS= 10 V

3.0

Q_g(Max.) (nC)

9.6

• Repetitive Avalanche Rated

• Fast Switching

_gs(nC)

_gd(nC)

• Ease of Paralleling

Configuration

Single

• Simple Drive Requirements

• Compliant to RoHS Directive 2002/95/EC

D²PAK

I²PAK

(TO-263)

(TO-262)

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

N-Channel MOSFET

ORDERING INFORMATION

Package

D²PAK (TO-263)

SiHFBE30S-GE3

IRFBE30SPbF

SiHFBE30S-E3

D²PAK (TO-263)

I²PAK (TO-262)

SiHFBE30L-GE3

IRFBE30LPbF

SiHFBE30L-E3

Lead (Pb)-free and Halogen-free

SiHFBE30STRL-GE3^a

IRFBE30STRLPbF^a

SiHFBE30STL-E3^a

Lead (Pb)-free

Note

a. See device orientation.

ABSOLUTE MAXIMUM RATINGS (T_C= 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

LIMIT

800

UNIT

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

_C= 25 °C

4.1

2.6

Continuous Drain Current

V_GSat 10 V

I_D

_C= 100 °C

Pulsed Drain Current^a

I_DM

Linear Derating Factor

1.0

260

4.1

W/°C

Single Pulse Avalanche Energy^b

Avalanche Current^a

Repetitive Avalanche Energy^a

E_AS

I_AR

E_AR

Maximum Power Dissipation

Peak Diode Recovery dV/dt^c

_C= 25 °C

P_D

125

2.0

dV/dt

T_J, T_stg

V/ns

Operating Junction and Storage Temperature Range

Soldering Recommendations (Peak Temperature)

- 55 to + 150

°C

for 10 s

300^d

lbf · in

N · m

Mounting Torque

6-32 or M3 screw

1.1

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. V_DD= 50 V, starting T_J= 25 °C, L = 29 mH, R_g= 25 , I_AS= 4.1 A (see fig. 12).

c. I_SD 4.1 A, dI/dt  100 A/μs, V_DD 600 V, T_J 150 °C.

d. 1.6 mm from case.

* Pb containing terminations are not RoHS compliant, exemptions may apply

Document Number: 91119

S11-1053-Rev. C, 30-May-11

www.vishay.com

This document is subject to change without notice.

THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

12 3 4 5 6 7...11

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与IRFBE30STRLPBFA相关器件

型号	品牌	获取价格	描述	数据表
IRFBE30STRR	VISHAY	获取价格	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFBE30STRRPBF	VISHAY	获取价格	Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal
IRFBE32	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 3.2A I(D) \| TO-220AB
IRFBF20	INFINEON	获取价格	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)
IRFBF20	VISHAY	获取价格	Power MOSFET
IRFBF20-002	VISHAY	获取价格	Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal
IRFBF20-018PBF	VISHAY	获取价格	Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal
IRFBF20-030PBF	VISHAY	获取价格	Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal
IRFBF20-031PBF	VISHAY	获取价格	Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal
IRFBF20L	INFINEON	获取价格	Power MOSFET(Vdss=900V, Rds(on)=8.0ohm, Id=1.7A)

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